Determination of the Facet Index in Area Selective Epitaxy of GaAs

Abstract

Area selective epitaxy of GaAs on GaAs substrates masked by SiO 2 has been investigated using migration-enhanced epitaxy (MEE) with 2 s annealing after Ga deposition. By this method, successful area selective epitaxy of GaAs has been achieved at substrate temperatures around 590 • C. We have carried out area selective epitaxy of GaAs on GaAs substrates of various surface indices. Side facets are found to be composed of vertical {110} facets when epitaxial growth is carried out on GaAs (n11)A substrates, and composed of inclined {n20} facets when GaAs (n11)B substrates are used. It is determined that the growth rates of A-and B-surfaces are the most important factors in the facet index determination.

Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy

“…SAE of GaAs at the millimeter, micrometer and nanoscale by molecular beam epitaxy (MBE) has been previously achieved by Okamoto [3], Liu et al [4], Allegretti et al [5] and Lee et al [6]. Another technique for the successful achievement of SAE has been the technique called migration enhanced epitaxy (MEE), in which the group III and group V precursors are deposited in separate steps [7][8][9]. Little work has been realized up to now for the SAE of other III-V materials such as InP, InAs and AlAs, though some initial results were achieved by Bacchin and Nishinaga [10,11] by periodic supply epitaxy, a similar technique to MEE.…”

Area selective growth of GaAs by migration‐enhanced epitaxy

“…These problems are circumvented by using the MEE deposition sequence [3,13]. Since Ga atoms deposited on the SiO 2 mask remain unreacted in the Ga-deposition period, they are easily evaporated from the mask if the temperature is reasonably high.…”

“…Therefore, well-defined area selective growth can be achieved by using MEE deposition sequence. MEE deposition sequence has also proved useful to lower the lateral growth rates [13,14].…”

Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon

“…The trapezoidal shape is expected for selective area growth of GaAs in trenches oriented along the [1 1 0] direction, which produces facets in the {1 1 1}B and {3 1 1}B planes near the mask edge [34]. This faceting is predicted for selective area deposition as a result of surface energy minimization during growth in a confined geometry [34][35][36]. The growth rate of GaAs on the (3 1 1) plane is nearly equal to that on the (1 0 0) plane, while that on the (1 1 1) plane is much less [36].…”