Selective fabrication of free-standing ABA and ABC trilayer graphene with/without Dirac-cone energy bands

Abstract

Graphene is a single-layer carbon sheet with a honeycomb structure, and bilayer graphene consists of two graphene sheets with AB stacking. In trilayer graphene, the third graphene sheet has two possible stacking sequences, A or C, when it is overlaid on bilayer graphene. It has been theoretically predicted that trilayer graphene exhibits a variety of novel electronic properties with/ without a Dirac-cone band, depending on the stacking sequence. In this regard, trilayer graphene has a high potential for widening the capability of graphene-based electronic devices. However, the difficulty of selective fabrication has hindered the progress of research. Here, we report the first success in the selective fabrication of quasi-free-standing trilayer graphene with ABA or ABC stacking grown epitaxially on hydrogen-terminated silicon carbide. Angle-resolved photoemission spectroscopy (ARPES) clearly demonstrated that our trilayer graphene with ABA stacking has a massless Dirac-like band near the Fermi level, while that with ABC stacking shows a parabolic non-Dirac-like band dispersion.

Moiréless correlations in ABCA graphene

“…the interlayer van der Waals forces are weak, it is well known that rhombohedral graphene reverts to the Bernal form when samples are processed with heat, pressure, or while performing lithography (19). In this work, we show that twisting two sheets of tDBG by a tiny (<0.1°) angle is a simple and robust method to create large area (up to micrometer-scale) rhombohedral graphene of fourlayer thickness (ABCA graphene).…”

“…Unfortunately, isolating rhombohedral stacked graphene of any thickness is extremely difficult as it is less energetically favorable than the multilayer counterpart, Bernal stacked graphene. Since the difference between rhombohedral and Bernal graphene is simply a lattice shift, and the interlayer van der Waals forces are weak, it is well known that rhombohedral graphene reverts to the Bernal form when samples are processed with heat, pressure, or while performing lithography ( 19 ). In this work, we show that twisting two sheets of tDBG by a tiny (<0.1°) angle is a simple and robust method to create large area (up to micrometer-scale) rhombohedral graphene of four-layer thickness (ABCA graphene).…”

Stacking control in graphene-based materials: A promising method for fascinating physical properties

“…Owing to the possibility of different stacking configurations, controlling the stacking structure of graphene materials is vital to realize specific properties and/or novel functional devices. In early 2018, Japanese scientists reported their success in selective fabrication of pure ABA and ABC trilayer graphene [5]. Their methods include a heat treat at high temperatures up to 1510 °C under pressure or high vacuum (ca.…”

“…Their methods include a heat treat at high temperatures up to 1510 °C under pressure or high vacuum (ca. 10 -7 Torr), and the precise temperature and pressure control is the key to the selective fabrication [5]. Obviously, the application of their methods will be limited by these harsh conditions.…”

Αξιοποίηση Γραμμικών Και Μη-Γραμμικών Ιδιοτήτων Του Γραφενίου Σε Νανοφωτονικούς Κυματοδηγούς

“…Συγκεκριμένα για το ABA tri-layer, η οπτική αγωγιμότητα υπολογίστηκε θεωρητικά στο [199] δείχνοντας ικανοποιητική ποιοτική συμφωνία με την προσέγγιση που ακολουθούμε. Επιπλέον, η επιλεκτική κατασκευή τόσο ABA όσο και ABC tri-layer graphene ανακοινώθηκε πολύ πρόσφατα στο [200]. Συμπερασματικά, όσον αφορά τη γραμμική επιφανειακή αγωγιμότητα, θα θεωρούμε ότι για N < 9 δίνεται από αυτή του μόνο-ατομικού φύλλου πολλαπλασιασμένη με τον αριθμό των φύλλων N .…”