Stacking control in graphene-based materials: A promising method for fascinating physical properties

Abstract

Graphene, defined as a single atomic plane of graphite, is a semimetal with small overlap between the valence and the conduction bands. The stacking of graphene up to several atomic layers can produce diverse physical properties, depending on the stacking way. The bilayer graphene is also a semimetal, adopting the AB-stacked (or Bernal-stacked) structure or the rare AA-stacked structure. The trilayer or a few layer graphene (FLG) can be semimetal or semiconductor, depending on whether it takes Bernal (ABA) stacking or rhombohedral (ABC) stacking. We will give a perspective on the recent two mild approaches to control the stacking via local transition from ABC stacking into ABA stacking. It is believed that with the rapid development of graphene-based materials, these techniques for stacking control can be used for more complex structure to fulfill fascinating properties and devices.Graphene, defined as a single atomic plane of graphite, is a semimetal with small overlap between the valence and the conduction bands [1]. The stacking of graphene up to several atomic layers can produce diverse physical properties, depending on the stacking way. The bilayer graphene is also a semimetal, adopting the AB-stacked (or Bernal-stacked) structure or the rare AA-stacked structure [2]. The trilayer or a few layer graphene (FLG) can be semimetal or semiconductor, depending on whether it takes Bernal (ABA) stacking or rhombohedral (ABC) stacking.Compared with these ideal stacking structure, the stacking structure in most graphene multilayers is actually more complex. Twinning is a common feature, where different stacking configurations coexist, connected by discrete twin boundaries [3]. Twisted multilayers, where one layer is rotated relative to another, have also been observed experimentally. These complex structures usually lead to more fruitful or even exotic physical properties. It has recently been reported in 2018 that a small twist angle of 1.1 o induced unconventional superconductivity [4], and this feature can be used for a superconducting transistor made of graphene for quantum devices. *

Graphene-Based Hydrogen Gas Sensors: A Review

“…Recently, several studies were performed on the 3D structuring of graphene flakes into volumetric porous structures built of graphene sheets of different agglomeration degrees. When occurring in the form of nanosized flakes, in most cases graphene undergoes spontaneous self-stacking due to dispersive attraction forces often called π-π stacking [16]. The existence of these forces results in the formation of graphene agglomerates.…”

“…Processes 2020, 8, x FOR PEER REVIEW 4 of 27 stacking due to dispersive attraction forces often called π-π stacking [16]. The existence of these forces results in the formation of graphene agglomerates.…”

Deep Elastic Strain Engineering of 2D Materials and Their Twisted Bilayers

“…46,60 The phase transition of transition-metal dichalcogenides (TMDs) also only occurs under large strain (Figure 3i,j), emphasizing the importance of large strain for ESE/DESE applications and other phenomena (such as phase transformation). 48 ■ COMBINING ESE/DESE WITH TWISTRONICS Because of the relatively simple mechanism of ESE/DESE, the synergy mechanism of ESE/DESE with other engineering methods can be well-expected, such as the general mechanisms including defects engineering, 10,11 doping engineering, 12 and other mechanisms for 2D materials due to its interlayer interaction including stacking engineering, 13 controlling numbers of layers, 64 and especially the recent proposed twistronics. 14 For example, the interlayer interaction in 2D materials and their heterostructures have been demonstrated as an effective method to control their properties.…”

“…4,8,9 However, compared to the great success of the chemical alloying strategy, ESE as a new approach to tailor chemical and physical properties of 2D material devices remains to be (both theoretically and experimentally) investigated for a comprehensive understanding and realistic applications. What's more, because of the simple mechanism of ESE/ DESE (by pure mechanical loading alone), it can be also easily synergized with other property modulation methods, such as defects engineering, 10,11 doping engineering, 12 and stacking engineering, 13 especially recent proposed "twistronics". 14 Unlike bulk crystals, multilayer 2D materials are assembled by stacking monolayers via a weak van der Waals (vdW) interaction.…”

Research status and prospect of graphene materials in aviation

“…In addition to single element doping, two (such as B and N; S and N) or more than two elements can also be doped together to enhance the electrochemical performance of graphene. However, doped graphene cannot avoid the stacking and agglomeration between graphene, and other structural design and assembly methods need to be combined to avoid the problem of graphene restacking and agglomeration [14,15] (Figure 3(a)). Figure 3: (a) Graphene stacking and agglomeration [14] .…”