Selective etching of spin-coated and thermally evaporated As30S45Se25 thin films

Comparison of solution processed As33S67 thin films deposited using primary amines of various aliphatic chain length

“…4). Measured transmission spectra were evaluated by the procedure published in [17] providing the values of refractive index, optical bandgap and thickness of the thin films.…”

“…The measurements were performed on three separate samples for each individual treatment. For determination of thicknesses and refractive index the transmission spectra were fitted by procedure described in [17] based on Wemple-DiDomenico´s equation [18] and Swanepoel´s model of thin films on substrate [19]. Values of optical bandgap were determined using Tauc´s method for semiconductors [20].…”

Utilization of As50Se50 thin films in electron beam lithography

“…Photosensitivity of As50Se50 thin films to VIS electromagnetic irradiation was studied using halogen lamp (120 mW/cm 2 ) with IR cut off filter in Ar atmosphere. Transmission spectra of as-prepared thin films and films exposed for various times to halogen lamp were measured using spectrometer UV-3600 (Shimadzu) and consequently evaluated by the procedure described in [25] providing optical parameters (optical band gap and spectral dependence of refractive index) of the thin films. Raman spectra were measured using IFS55/FRA106 (Bruker) spectrometer with Nd:YAG laser (1064 nm) as excitation source.…”

Exposure enhanced photoluminescence of CdS0.9Se0.1quantum dots embedded in spin-coated Ge25S75thin films

“…The S precursor solution (1 M), containing 0.32 g of S, 5 mL of TOP and 5 mL of ODE, was prepared under an Ar atmosphere; the solution was permanently stirred at 50 C until complete dissolution of S. The Se precursor solution (1 M), containing 0.79 g of Se, 5 mL of TOP and 5 mL of ODE, was prepared under an Ar atmosphere at 100 C and permanent stirring.…”

“…It was conrmed, that spin-coated chalcogenide glass thin lms of various compositions can be also photo-sensitive. 30,49,50 Thus, the prepared thin lms were also exposed to UV lamp light (365 nm) and the inuence of UV exposure on optical properties and PL was studied. The geometrical and optical parameters of prepared blank and doped Ge 25 S 75 thin lms were calculated by procedure presented in 29,47 based on Swanepoel's model 51 and WempleDiDomenico's equation 52 from transmission spectra of studied thin lms.…”