Selective epitaxy of InP on Si(100) substrates prepared by liquid-phase epitaxy

Sugai, Maki; Kochiya, Toshio; Oyama, Yutaka; Nishizawa, Jun Ichi

doi:10.1016/j.jpcs.2007.07.005

Cited by 4 publications

(3 citation statements)

References 2 publications

(2 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In case of InP-on-Si, ELO techniques have been more widely employed [190][191][192][193][194][195][196], compared with GaAs-on-Si in which direct growth of GaAs on Si is preferred. Because it is very difficult to obtain low density of TDs through the direct growth of InP on Si, the use of ELO method is beneficial for achieving high-quality InP layer on Si.…”

Section: Epitaxial Lateral Overgrowthmentioning

confidence: 99%

Heteroepitaxial Growth of III-V Semiconductors on Silicon

et al. 2020

View full text Add to dashboard Cite

Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various defects during the growth of III-V on Si. In order to tackle these issues, a variety of growth techniques have been developed so far, leading to the demonstration of high-quality III-V materials and optoelectronic devices monolithically grown on various Si-based platform. In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed. After introducing the fundamental and technical challenges for III-V-on-Si heteroepitaxy, we discuss recent approaches for resolving growth issues and future direction towards monolithic integration of III-V on Si platform.

show abstract

Section: Epitaxial Lateral Overgrowthmentioning

confidence: 99%

Heteroepitaxial Growth of III-V Semiconductors on Silicon

et al. 2020

View full text Add to dashboard Cite

show abstract

“…In general, the LPE technique has many advantages, including fast growth rates, capability for large wafer dimensions, and control of chemical composition of the growing layers. This technique has been used for growing epitaxial layers of many functional materials, for example, growth of garnet-type magneto-optical layers and compound semiconductors . The LPE technique, using an adequate flux having low eutectic temperature and sufficient solubility for ZnO and MgO, enables us to grow ZnO and w -(Zn,Mg)O layers at relatively low temperatures.…”

Section: Introductionmentioning

confidence: 99%

“…This technique has been used for growing epitaxial layers of many functional materials, for example, growth of garnet-type magneto-optical layers 24 and compound semiconductors. 25 The LPE technique, using an adequate flux having low eutectic temperature and sufficient solubility for ZnO and MgO, enables us to grow ZnO and w-(Zn,Mg)O layers at relatively low temperatures. A low eutectic temperature is desirable to reduce Zn evaporation.…”

Section: Introductionmentioning

confidence: 99%

Growth of Bulky Single Crystalline Films of (Zn,Mg)O Alloy Semiconductors by Liquid Phase Epitaxy

Kobayashi

Sekiwa

Miyamoto

et al. 2008

Crystal Growth & Design

View full text Add to dashboard Cite

Very thick (about 0.5 mm) single crystalline films of (Zn1−x Mg x )O solid solution have been grown by a liquid phase epitaxy (LPE) technique. The source materials, ZnO and MgO, were dissolved in a molten PbO-Bi2O3 flux and deposited on ZnO substrates as epitaxial (Zn1−x Mg x )O layers. The (Zn1−x Mg x )O layers thus obtained showed high crystallinity, similar to that of the ZnO substrate, and exhibited n-type conductivity with relatively high Hall mobilities (>90 cm2 V−1 s−1 for x = 0.1 at room temperature). Moreover, the activation energy of the mobile electrons was about 50 meV, and this value was independent of the MgO fraction. Since LPE is an appropriate technique for growing large area films, we examined the growth of (Zn,Mg)O thick films on 2 in. diameter ZnO substrates. The Mg concentration in the LPE grown layer was quite uniform, and the Li concentration was two or three orders lower than an ordinary ZnO substrate.

show abstract

Liquid-Phase Epitaxy

Mauk

2015

Handbook of Crystal Growth

View full text Add to dashboard Cite

Selective epitaxy of InP on Si(100) substrates prepared by liquid-phase epitaxy

Cited by 4 publications

References 2 publications

Heteroepitaxial Growth of III-V Semiconductors on Silicon

Heteroepitaxial Growth of III-V Semiconductors on Silicon

Growth of Bulky Single Crystalline Films of (Zn,Mg)O Alloy Semiconductors by Liquid Phase Epitaxy

Liquid-Phase Epitaxy

Contact Info

Product

Resources

About