Selective epitaxial growth properties and strain characterization of Si1−x Ge x in SiO2 trench arrays

Koo, Sang‐Mo; Jang, Hyunchul; Ko, Dae Hong

doi:10.3938/jkps.70.714

Cited by 4 publications

(4 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…And several groups have successfully used the replacement fin processing to attain an SiGe fin and trap the misfit threading dislocation defects on the STI sidewall by tuning the growth parameters and applying a high temperature anneal or a laser anneal. [7][8][9] The composition of their reported SiGe fins is homogenous in the width of the fin. Moreover, the thin SiGe epitaxial cladding of Si fins to form an SiGe-cladded FinFET exhibits ∼ 2x higher hole mobility and ∼ 2x better I ON /I OFF than Si control device, and the DIBL is improved compared with Si control device.…”

Section: Introductionmentioning

confidence: 99%

High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing*

Zan

Cheng

et al. 2020

Chinese Phys. B

View full text Add to dashboard Cite

A high crystalline quality of SiGe fin with an Si-rich composition area using the replacement fin processing is systematically demonstrated in this paper. The fin replacement process based on a standard FinFET process is developed. A width of less than 20-nm SiGe fin without obvious defect impact both in the direction across the fin and in the direction along the fin is verified by using the high angle annular dark field scanning transmission electron microscopy and the scanning moiré fringe imaging technique. Moreover, the SiGe composition is inhomogenous in the width of the fin. This is induced by the formation of {111} facets. Due to the atomic density of the {111} facets being higher, the epitaxial growth in the direction perpendicular to these facets is slower than in the direction perpendicular to {001}. The Ge incorporation is then higher on the {111} facets than on the {001} facets. So, an Si-rich area is observed in the central area and on the bottom of SiGe fin.

show abstract

Section: Introductionmentioning

confidence: 99%

High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing*

Zan

Cheng

et al. 2020

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…Compared with STI last approach, STI first scheme, which is based on the replacement of the Si material by selective epitaxial growth (SEG) of the high mobility material, is easier and flexible to combine different materials for n-and p-MOS devices on one substrate. So far, several groups have successfully used STI first scheme with the aspect ratio trapping (ART) technique to trap the misfit threading dislocation (TD) defects at the STI sidewall by tuning the growth parameters and applying a high temperature thermal or laser anneal [10][11][12][13][14]. However, the process optimization of the SiGe Fin formation for the STI first strategy is still not fully understood.…”

Section: Introductionmentioning

confidence: 99%

Process optimization of the Si_0.7Ge_0.3 Fin Formation for the STI first scheme

Zhao

Wang

et al. 2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The process optimization of the Si 0.7 Ge 0.3 Fin formation for the shallow trench isolation first strategy is systematically demonstrated in this paper. The optimized Si Fin etching and recess process are firstly developed to attain an improvement of side wall roughness and profile for the Si 0.7 Ge 0.3 selective epitaxial growth. Moreover, a new developed photoresist etching back process, inserted between Tetramethylammonium hydroxide etching and Si 0.7 Ge 0.3 selective epitaxial growth, is employed to eliminate the surface defects completely. Furthermore, an optimized pre-baking temperature of Si 0.7 Ge 0.3 selective epitaxial growth results in a more rounding V-shaped Si recess profile compared with its V-shaped profile produced by the Tetramethylammonium hydroxide etching. The incoming profile optimization is critical to achieve the structural defects free for the Si 0.7 Ge 0.3 layer selective epitaxial growth. Finally, a high crystalline quality of the Si 0.7 Ge 0.3 Fin formation inside narrow trench is realized by utilizing the SiGe chemical mechanical polishing and Shallow Trench Isolation recess process. This work presents a good technique for high-mobility pMOSFETs in future technology node.

show abstract

“…17) In the case of Si 1−x Ge x or Ge fin layers grown selectively in narrow trench patterns, compressive strains are generated asymmetrically with different values in the directions parallel and perpendicular to the fins. [18][19][20][21] This anisotropic in-plane strain is due to differences in the strain relaxation in the two directions, as caused by the following mechanisms. First, the dislocation gliding slip systems differ in the parallel and perpendicular directions.…”

Section: Introductionmentioning

confidence: 99%

“…In our previous study, we examined the anisotropic in-plane strain in the fin structure. [18][19][20][21] However, there remains a need for a more systematic study of the factors influencing the asymmetric strain in each of the fin dimensions.…”

Section: Introductionmentioning

confidence: 99%

Analysis of anisotropic in-plane strain behavior in condensed Si_1−xGe_x fin epitaxial layer using X-ray reciprocal space mapping

Jang

Kim

Koo

et al. 2019

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Epitaxial Si 1−x Ge x fin layers with x = 0.50 and 0.63 were selectively grown on trench patterned Si (001) substrates with trench widths of 65 and 90 nm. Using a dry oxidation process for the Si 1−x Ge x fin layers, the Ge was condensed by up to ca. 90% while anisotropic in-plane strain was induced. To analyze the anisotropic in-plane strain behavior, reciprocal space mapping measurements were performed in the directions parallel and perpendicular to the fins. After the condensation, a compressive strain of ca. 1% was induced in the direction parallel to the fin. We discuss the uniaxial stress factor influencing the anisotropic in-plane strain of the condensed Si 1−x Ge x fin layer in the two trench patterns.

show abstract

Selective epitaxial growth properties and strain characterization of Si1−x Ge x in SiO2 trench arrays

Cited by 4 publications

References 25 publications

High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing*

High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing*

Process optimization of the Si_0.7Ge_0.3 Fin Formation for the STI first scheme

Analysis of anisotropic in-plane strain behavior in condensed Si_1−xGe_x fin epitaxial layer using X-ray reciprocal space mapping

Contact Info

Product

Resources

About

Selective epitaxial growth properties and strain characterization of Si1−x Ge x in SiO2 trench arrays

Cited by 4 publications

References 25 publications

High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing*

High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing*

Process optimization of the Si0.7Ge0.3 Fin Formation for the STI first scheme

Analysis of anisotropic in-plane strain behavior in condensed Si1−x Ge x fin epitaxial layer using X-ray reciprocal space mapping

Contact Info

Product

Resources

About

Process optimization of the Si_0.7Ge_0.3 Fin Formation for the STI first scheme

Analysis of anisotropic in-plane strain behavior in condensed Si_1−xGe_x fin epitaxial layer using X-ray reciprocal space mapping