Selective epitaxial growth of silicon in a barrel reactor

Takoudis, Christos G.; Kastelic, Miha

doi:10.1016/0009-2509(89)85141-3

Cited by 10 publications

(4 citation statements)

References 41 publications

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“…36,39−42 For example, in selective epitaxy of Si, HCl has been added to the Si source gas (e.g., SiH 4 /H 2 or SiH 2 Cl 2 /H 2 ) to selectively etch Si atoms from the oxide non-growth area. 39,80 Even alternation between deposition and etching steps has been explored, 81 which more closely resembles approaches that can be used for area-selective ALD. Selective CVD of Cu on W can be achieved by selective functionalization of SiO 2 regions with chlorotrimethylsilane molecules.…”

Section: Solution: Implementation Of Correction Stepsmentioning

confidence: 99%

“…A solution to this challenge is to implement correction steps during the ALD process. Inspiration for these corrections steps can be found in earlier literature on selective epitaxy and selective CVD. ,− For example, in selective epitaxy of Si, HCl has been added to the Si source gas (e.g., SiH 4 /H 2 or SiH 2 Cl 2 /H 2 ) to selectively etch Si atoms from the oxide non-growth area. , Even alternation between deposition and etching steps has been explored, which more closely resembles approaches that can be used for area-selective ALD. Selective CVD of Cu on W can be achieved by selective functionalization of SiO 2 regions with chlorotrimethylsilane molecules. , Similarly, in recent years, several area-selective ALD studies have followed the strategy of implementing correction steps for improving the selectivity and also for developing new area-selective ALD approaches.…”

Section: Solution: Implementation Of Correction Stepsmentioning

confidence: 99%

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From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity

2018

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Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently gaining momentum in semiconductor processing, because of the increasing need for eliminating the edge placement errors of top-down processing. Moreover, area-selective ALD offers new opportunities in many other areas such as the synthesis of catalysts with atomic-level control. This Perspective provides an overview of the current developments in the field of area-selective ALD, discusses the challenge of achieving a high selectivity, and provides a vision for how area-selective ALD processes can be improved. A general cause for the loss of selectivity during deposition is that the character of surfaces on which no deposition should take place changes when it is exposed to the ALD chemistry. A solution is to implement correction steps during ALD involving for example surface functionalization or selective etching. This leads to the development of advanced ALD cycles by combining conventional two-step ALD cycles with correction steps in multistep cycle and/or supercycle recipes.

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Section: Solution: Implementation Of Correction Stepsmentioning

confidence: 99%

Section: Solution: Implementation Of Correction Stepsmentioning

confidence: 99%

From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity

2018

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“…However, the primary concern with all LE n multipatterning processes is alignment control. [32,33] It is virtually impossible to achieve an exact alignment between multiple masks at these process nodes, which makes it challenging to achieve the desired yields. The advent of EUV lithography finally offered new resolution capabilities, and many process layers that used TP or QP with deep ultraviolet (DUV) lithography were re-engineered to use a single EUV mask.…”

Section: Ald For Multiple Patterningmentioning

confidence: 99%

“…Initial reports on selective deposition have been reported and modeled by G. Neudeck and Kastelic in the mid-to-late 1980s. [32,33] A semiempirical expression was developed and reported for the selective epitaxial growth (SEG) and epitaxial lateral overgrowth of silicon in a pancake and barrel reactors, respectively. AS-ALD is achieved by area activation using promotor-type molecules and area deactivation using inhibitor-type molecules.…”

Section: Area-selective Aldmentioning

confidence: 99%

Atomic Layer Deposition Beyond Thin Film Deposition Technology

Yasmeen

Ryu

Lee

et al. 2022

Adv Materials Technologies

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Atomic layer deposition (ALD) is well known as the most advanced coating technique so far due to its unique deposition characteristics, such as uniformity and 3D conformality. ALD is not limited to coating technologies alone; however, over the past few decades, it has been extended beyond coating technologies to address several bottlenecks in the semiconductor industry. This short review article provides a summary of previous studies published on various approaches to using ALD to overcome the technological challenges in Si device fabrication beyond, that is, ALD for multiple patterning, area‐selective atomic layer deposition, atomic layer etching, and ALD for dry photoresist. The purpose of this review is to determine the existing trend in ALD for noncoating applications and to understand and provide a layout of what ALD can bring in the future. In addition, it helps in appreciating the potential of ALD in existing and future noncoating processes. Furthermore, this study provides a developing route for ALD in other noncoating applications in the semiconductor industry. It is believed this review would aid ALD researchers in its use in various noncoating processes in the future to extend Moore's law.

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