Optimization of substrate-selective atomic layer deposition of zirconia on electroplated copper using ethanol as both precursor reactant and surface pre-deposition treatment

Anderson, Nickolas; Saha, Soumya; Jursich, Gregory; Takoudis, Christos G.

doi:10.1007/s10854-021-05267-0

Cited by 6 publications

(4 citation statements)

References 52 publications

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“…In a previous study, we reported successful selective deposition of Zirconia thin films on Si and not on Cu via ALD for the first time using an alkoxide precursor, zirconium 2‐methyl‐2‐butoxide (ZMB) and ethanol 5 . A steady growth rate of 2 Å/cycle was achieved at 200°C, which is higher than most of the other reported values in the literature for different Zr precursor and co‐reactant combinations over a variety of temperatures and pressure 6–12 . However, taking a closer look at the ZrO 2 –SiO 2 /Si interface is necessary for the film deposited using ZMB and ethanol to be of potentially great interest in semiconductor fabrication.…”

Section: Introductionmentioning

confidence: 76%

“…5 A steady growth rate of 2 Å/cycle was achieved at 200 C, which is higher than most of the other reported values in the literature for different Zr precursor and coreactant combinations over a variety of temperatures and pressure. [6][7][8][9][10][11][12] However, taking a closer look at the ZrO 2 -SiO 2 /Si interface is necessary for the film deposited using ZMB and ethanol to be of potentially great interest in semiconductor fabrication.…”

mentioning

confidence: 99%

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The interface of atomic layer deposited ZrO₂ on Si/SiO₂ from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

Saha

Phakatkar

Jursich

et al. 2023

Surface & Interface Analysis

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Recent developments in inherently selective atomic layer deposition (ISALD) resulted in the deposition of amorphous ZrO2 thin film on Si with a high growth rate (2 Å/cycle). The deposited film with a high dielectric constant via ISALD may be used in semiconductor processing. However, the amorphous nature of the film and the ZrO2–SiO2/Si interface must be assessed to ensure the prevention of leakage current. There is little information available in the literature regarding the ZrO2–SiO2/Si interface of atomic layer deposition (ALD) ZrO2 film. In this study, high‐resolution transmission electron microscopy was extensively used to determine whether the film and the interface were crystalline or amorphous. It was interesting to find that a high‐energy electron beam can induce crystallinity in the amorphous as‐deposited ZrO2 film within minutes of exposure. Moreover, outward diffusion of the nucleated tetragonal ZrO2 away from the interface was also observed.

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Section: Introductionmentioning

confidence: 76%

mentioning

confidence: 99%

The interface of atomic layer deposited ZrO₂ on Si/SiO₂ from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

Saha

Phakatkar

Jursich

et al. 2023

Surface & Interface Analysis

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“…Energy source activation methods use external energy to activate the surface and accelerate the ALD process in the desired growth region . New precursors and alternative coreactants have recently been utilized to improve ALD selectivity. − In all the above scenarios, the experimental ALD process conditions, such as temperature, purge, pulse time, correction steps, , and radio frequency bias, are all factors that influence the selectivity of the S-ALD. Notably, a selectivity of more than 99.9999% is required in semiconductor fabrication, which desires high accuracy and discrepancy growth on the substrates.…”

Section: Introductionmentioning

confidence: 99%

Nucleation Delay in Selective Atomic Layer Deposition: Density Functional Insights Coupled Numerical Nucleation Model

Wen,

Lan,

et al. 2024

J. Phys. Chem. C

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Selective atomic layer deposition (S-ALD) is gaining significant attention for its pivotal role in the bottom-up manufacturing of semiconductors and catalysts. This study delves into the selective growth mechanisms of M(N t BU)(NEt 2 ) 3 (M = Nb and Ta) on Cu and SiO 2 substrates using density functional theory (DFT) calculations. We discovered that the nucleation delay on Cu substrates is primarily due to sluggish dissociation kinetics. Utilizing these insights, we propose an anisotropic growth model framed within microkinetics and numerical nucleus expansion approaches. Our model integrates defect-and diffusion-induced nucleation parameters, aligning closely with experimental growth curves and accurately quantifying ALD nucleation delays in the initial stages. Such a model builds a direct link between the observed nucleation delay and ALD experimental parameters from the atomic scale. Furthermore, this DFT-based nucleation model demonstrates a robust predictive capacity for nucleation delay cycles for a wide range of materials, aligning well with the experimental findings. This advancement offers a theoretical method for assessing the selectivity of S-ALD from the bottom up, enhancing our understanding and control of these critical processes.

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“…Hence, the use of reductive co-reactants to reduce metal catalytic activity is a promising method. Some chemicals, such as acetic acid 42 , ethanol 43 – 45 , isopropyl alcohol 46 , and tert-butylamine 47 , are used to prevent surface oxidation and undesired nucleation on the metal. Nonetheless, nucleation on metal is still difficult to suppress 48 .…”

Section: Introductionmentioning

confidence: 99%

Self-aligned patterning of tantalum oxide on Cu/SiO2 through redox-coupled inherently selective atomic layer deposition

Lan

et al. 2023

Nat Commun

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Atomic-scale precision alignment is a bottleneck in the fabrication of next-generation nanoelectronics. In this study, a redox-coupled inherently selective atomic layer deposition (ALD) is introduced to tackle this challenge. The ‘reduction-adsorption-oxidation’ ALD cycles are designed by adding an in-situ reduction step, effectively inhibiting nucleation on copper. As a result, tantalum oxide exhibits selective deposition on various oxides, with no observable growth on Cu. Furthermore, the self-aligned TaOx is successfully deposited on Cu/SiO2 nanopatterns, avoiding excessive mushroom growth at the edges or the emergence of undesired nucleation defects within the Cu region. The film thickness on SiO2 exceeds 5 nm with a selectivity of 100%, marking it as one of the highest reported to date. This method offers a streamlined and highly precise self-aligned manufacturing technique, which is advantageous for the future downscaling of integrated circuits.

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Optimization of substrate-selective atomic layer deposition of zirconia on electroplated copper using ethanol as both precursor reactant and surface pre-deposition treatment

Cited by 6 publications

References 52 publications

The interface of atomic layer deposited ZrO₂ on Si/SiO₂ from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

The interface of atomic layer deposited ZrO₂ on Si/SiO₂ from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

Nucleation Delay in Selective Atomic Layer Deposition: Density Functional Insights Coupled Numerical Nucleation Model

Self-aligned patterning of tantalum oxide on Cu/SiO2 through redox-coupled inherently selective atomic layer deposition

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Optimization of substrate-selective atomic layer deposition of zirconia on electroplated copper using ethanol as both precursor reactant and surface pre-deposition treatment

Cited by 6 publications

References 52 publications

The interface of atomic layer deposited ZrO2 on Si/SiO2 from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

The interface of atomic layer deposited ZrO2 on Si/SiO2 from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

Nucleation Delay in Selective Atomic Layer Deposition: Density Functional Insights Coupled Numerical Nucleation Model

Self-aligned patterning of tantalum oxide on Cu/SiO2 through redox-coupled inherently selective atomic layer deposition

Contact Info

Product

Resources

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The interface of atomic layer deposited ZrO₂ on Si/SiO₂ from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

The interface of atomic layer deposited ZrO₂ on Si/SiO₂ from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study