Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; Lau, Kei May

doi:10.1063/1.4867235

Cited by 42 publications

(32 citation statements)

References 15 publications

(15 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Through the monolithic integration that shares the same material platform, the fabrication cost and dimension of lighting systems can be considerably reduced, offering a great functionality and stability for a broad range of applications. Among previous successful demonstrations of monolithic integration of optoelectronic devices on various material systems [2][3][4][5][6][7][8][9][10][11][12], the monolithic integration of GaN-based LEDs and FETs is of research interest due to their unique material properties such as large breakdown voltage [13,14], high operating frequency [15,16], and high temperature duration [17], and that makes it preferable for the emerging markets of high power-high voltage lighting systems and visible light communication [18,19]. However, there have been only few reports on the monolithic integration of GaN-based LEDs and FETs, due mainly to the restriction of realizing complicated epitaxial structures.…”

Section: Introductionmentioning

confidence: 99%

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors

Lee¹,

Yang²,

Chen³

et al. 2014

Opt. Express

View full text Add to dashboard Cite

In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

show abstract

Section: Introductionmentioning

confidence: 99%

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors

Lee¹,

Yang²,

Chen³

et al. 2014

Opt. Express

View full text Add to dashboard Cite

show abstract

“…1. The integrated HEMT-LED devices exhibited comparable performance with respect to stand-alone HEMTs and LEDs, except for the transistor breakdown [3,4]. In our previous results, the breakdown voltage of the HEMTs was compromised by the underlying conductive p-GaN layer of the LED structure.…”

Section: Introductionmentioning

confidence: 70%

Improved breakdown characteristics of monolithically integrated III-nitride HEMT–LED devices using carbon doping

Liu

Huang

et al. 2015

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

“…The HEMT can be easily dry etched unless very precise control of the etch stop can be achieved. In addition, plasma damage to the surface is also a problem [7]. However, these disadvantages due to dry etching can be avoided by SEG method.…”

Section: Discussionmentioning

confidence: 99%

P‐9.2: GaN HEMT‐LED Homogeneous Integration for Micro‐LED Mass Transferring

Liu¹,

Feng²,

Lu³

et al. 2018

Symp Digest of Tech Papers

Self Cite

View full text Add to dashboard Cite

Mass transfer is transferring a number of Micro‐LED pixels from the original substrate to target backplane, which aims to provide electrical connection and mechanical support for Micro‐LED pixels. Mass transfer technology plays a crucial role in Micro‐LED displays. For Micro‐LED displays larger than 2 inches, such as mobile phone and camera (2∼7 inches), Pad and Laptop (7∼15 inches), television (larger than 15 inches), mass transfer is a significant process in fabrication process. Unfortunately, mass transfer has become a bottleneck restricting the development of the Micro‐LED commercialization. There are many technology routes to solve (or to avoid) the problem of mass transfer. In this experiment, we review several methods of GaN HEMT‐LED monolithic integration to provide better electrical connection and mechanical support of Micro‐LEDs. As the third‐generation semiconductor, then we choose a model to do simulation by using Silvaco. GaN can be used as high‐quality LED and HEMT, especially the mobility of GaN HEMT is more than 2000cm2/V. S, which higher hundreds of times than Si transistor or TFT (Thin Film Transistor). HEMT‐LED monolithic integration can greatly improve the driving performance, save pixel area, improve pixel density, but also can avoid the problem of electrical connection in the mass transfer.

show abstract

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

Cited by 42 publications

References 15 publications

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors

Improved breakdown characteristics of monolithically integrated III-nitride HEMT–LED devices using carbon doping

P‐9.2: GaN HEMT‐LED Homogeneous Integration for Micro‐LED Mass Transferring

Contact Info

Product

Resources

About