Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors

Abstract

In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

Micro-LEDs, a Manufacturability Perspective

“…Lau et al have reported monolithic integration of InGaN/GaN light emitting diodes (LEDs) with AlGaN/GaN heterojunction field effect transistors (HFETs) [44] or vertical metal-oxide-semiconductor field effect transistor (VMOSFET) drivers [45], by selective growth of HFET or VMOSFET structures on the LED epilayers, as shown in Figure 6. Alternatively, lateral integration via selective removal of the HFET structure followed by selective growth of the LED structure on top of the exposed GaN buffer layer [46] or selective removal of the LED structure followed by selective growth of the metal-oxide-semiconductor field effect transistor (MOSFET) on top of the exposed n-GaN layer [47] have also been reported. Although it has been demonstrated that the performance of the integrated single LED-transistor chip is comparable to discrete LEDs and transistors [44] fabrication of micro-LED displays using this approach has not yet been reported.…”

Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor

“…This route can bypass the massive transfer, reduce cost and technological difficulties, and be more reliable in applications. Previously, GaN-based micro LEDs were integrated with GaN high-electron-mobility transistors (HEMTs) [2] or metal-oxide-semiconductor field-effect transistors (MOSFETs) [3]. GaN transistors generally have high breakdown voltages [4,5] and high working frequencies [6,7].…”

Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy

“…Basic functionalities such as light generation, modulation, propagation, and detection can now be fulfilled with a suite of highperformance GaN-based components, including light emitting diodes (LEDs), high electron mobility transistors (HEMTs), waveguides, and photodiodes (PDs), making it possible to accomplish a sophisticated micro-opto-electronic system (MOES) on a chip by monolithic integration [1][2][3]. There has been much progress recently on monolithic integration of GaN-based devices, especially HEMT-LED integration [4][5][6][7]. Monolithically integrated HEMT-LED is a voltage-controlled light emitter, which is simpler to work with in driver design, compared to the conventional current-controlled LEDs.…”