Selective epitaxial growth of GaAs by current controlled liquid phase epitaxy

Mouleeswaran, D.; Koyama, T.; Hayakawa, Y.

doi:10.1016/j.jcrysgro.2011.10.059

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Selective Epitaxy and Epitaxial Lateral Overgrowth1

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“…At the mask openings ("windows"), the exposed substrate serves as selective seeding areas in the LPE process. Selective epitaxy can also be implemented with current-controlled LPE [363]. LPE is thus highly amenable to such selective epitaxy, which is useful for reducing stress and defects associated with lattice mismatch and thermal expansion mismatch between the substrate and epitaxial layers, e.g., as occurs in GaAs or InP epitaxy on silicon substrates [361,362].…”

Section: Selective Epitaxy and Epitaxial Lateral Overgrowthmentioning

confidence: 99%

Liquid-Phase Epitaxy

Mauk

2015

Handbook of Crystal Growth

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Section: Selective Epitaxy and Epitaxial Lateral Overgrowthmentioning

confidence: 99%

Liquid-Phase Epitaxy

Mauk

2015

Handbook of Crystal Growth

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Epitaxial Crystal Growth: Methods and Materials

2017

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Epitaxial growth of thin films of material for a wide range of applications in electronics, optoelectronics, and magneto-optics is a critical activity in many industries. The original technique, in most instances, was liquid-phase epitaxy (LPE) as this was the simplest and often the cheapest route to producing device-quality layers. While some production processes are still based on LPE, most of the research activities and, increasingly, much of the production of electronic and optoelectronic devices is now centered on metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). These latter techniques are more versatile, although the equipment is more expensive, and can readily produce multilayer structures with atomic-layer control, which is becoming more and more fundamental to the nanoscale engineering being called upon now to produce device structures in as-grown multilayers. This chapter covers these three basic techniques, including some of their more common variants, and outlines the relative advantages and disadvantages of each of them. Some examples of growth in various materials systems of importance are also outlined for each of the three techniques.

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Selective epitaxial growth of GaAs by current controlled liquid phase epitaxy

Cited by 2 publications

References 29 publications

Liquid-Phase Epitaxy

Liquid-Phase Epitaxy

Epitaxial Crystal Growth: Methods and Materials

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