Selective embedded growth by LP-MOVPE in the Ga-In-As-P system

Westphalen, R.; Elsner, B.; Maassen, M.; Kayser, Oliver; Heime, K.; Balk, P.

doi:10.1016/0022-0248(92)90348-m

Cited by 11 publications

(4 citation statements)

References 29 publications

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“…Many studies on QCLs employing BH have been reported, but little effort has gone into exploring the regrowth phenomena. Additionally, although many authors have reported planar selective growth studies, [15][16][17][18][19][20] they are mostly done on mesas less than 3 lm for telecommunications lasers or require complex fabrication and growth processes. In reality, asymmetric growth rates on different crystallographic facets as well as other critical factors such as MOCVD growth parameters, mesa geometry, and nonuniform vapor-phase source concentration around the mesa make selective regrowth on such deep-etched QCL mesas unpredictable.…”

Section: Introductionmentioning

confidence: 99%

Analysis of InP Regrowth on Deep-Etched Mesas and Structural Characterization for Buried-Heterostructure Quantum Cascade Lasers

Cheng

Fan

Janssen

et al. 2011

Journal of Elec Materi

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We investigated the effect of deep-etched mesa sidewall profile and oxide overhang length on the regrowth structural characteristics for buriedheterostructure (BH) quantum cascade lasers (QCLs) grown by metalorganic chemical vapor deposition (MOCVD). The relationship between etched mesa sidewall geometry, oxide overhang length, oxide thickness, and growth uniformity was examined and is extensively discussed. In particular, anomalous growth in the vicinity of the oxide edge resulting from insufficient oxide overhang length was identified and studied. An ideal ratio of mesa height to oxide overhang length between 2.5 and 3.0 is proposed and experimentally justified to yield satisfactory planar regrowths without anomalous growth. Mesas in the ½011 direction with smoothly etched entrant profile yield a higher degree of growth uniformity than mesas in the [011] direction with the re-entrant profile.

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Section: Introductionmentioning

confidence: 99%

Analysis of InP Regrowth on Deep-Etched Mesas and Structural Characterization for Buried-Heterostructure Quantum Cascade Lasers

Cheng

Fan

Janssen

et al. 2011

Journal of Elec Materi

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“…18 One is the nonuniform InGaAs chemical composition at the TSR surface as is often reported on the patterned substrates. 26 The other is that the bending QW near the TSR bottom inherently produces the attractive potential shape for carriers. 27 Here, we studied the former effect in detail.…”

Section: Growth Mechanismmentioning

confidence: 99%

InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition

Sakuma

Shima

Awano

et al. 1999

Journal of Elec Materi

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Novel semiconductor quantum dots (QDs), grown in tetrahedral-shaped recesses (TSRs) formed on a (111)B GaAs substrate, are described from both material science and device application points of view. After explaining the fabrication procedure for TSRs, growth of InGaAs QDs and their optical properties are explained. It is revealed that an InGaAs QD of indium-rich chemical composition is formed spontaneously at the bottom of each TSR. The mechanism of the QD formation is discussed in detail. It is proved from magneto-photoluminescence that the QDs actually have optical properties peculiar to zero-dimensional confinement. Several experimental results indicating excellent growth controllability of the QDs are presented. Finally, recent challenges to apply the QDs to electronic memory devices are reported. Two kinds of devices, where the position of individual QD is artificially controlled, are proposed for the first time and the preliminary experimental results are explained.

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“…However, compared with the standard GaInAsP material system which has been widely investigated by SAG, [9][10][11][12][13][14] only few reports deal with the AlGaInAs alloys. [15][16][17][18] Here, binaries, ternaries, and quaternaries of the AlGaInAs material system were selectively grown and their characteristics systematically compared.…”

Section: Introductionmentioning

confidence: 99%

Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis

Dupuis¹,

Décobert²,

Lagrée³

et al. 2008

Journal of Applied Physics

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We studied selective area growth modeling and characterization of the AlGaInAs material system. We used a three-dimensional vapor phase diffusion model to extract the effective diffusion lengths of Al, Ga, and In species from measured thickness profiles of the three binaries AlAs, GaAs, and InP. Our growth conditions yield to 50, 85, and 10 m for Al, Ga, and In, respectively. Based on these values, we achieved a precise prediction of AlGaInAs thickness, composition, band gap, and biaxial strain variations in different selective area growth conditions. Particular attention was paid to the influence of neighboring cells in the case of high mask density. This configuration occurs in practical component mask layout. High mask density leads to interferences between masked cells and enhances the effect of the long diffusion length of aluminum and gallium species. Then, the biaxial strain is tensile shifted and the band gap is blue shifted in the vicinity of a mask, compared to reference material features grown away from the mask. High-resolution micro-photoluminescence and optical interferometer microscopy measurements confirmed the validity of simulated band gap and thickness variations for both bulk and multi-quantum well layers.

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Selective embedded growth by LP-MOVPE in the Ga-In-As-P system

Cited by 11 publications

References 29 publications

Analysis of InP Regrowth on Deep-Etched Mesas and Structural Characterization for Buried-Heterostructure Quantum Cascade Lasers

Analysis of InP Regrowth on Deep-Etched Mesas and Structural Characterization for Buried-Heterostructure Quantum Cascade Lasers

InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition

Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis

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