Silicon
nitride fabricated by low-pressure chemical vapor deposition (LPCVD)
to be silicon-rich (SiN
x
), is a ubiquitous
insulating thin film in the microelectronics industry, and an exceptional
structural material for nanofabrication. Free-standing <100 nm
thick SiN
x
membranes are especially compelling,
particularly when used to deliver forefront molecular sensing capabilities
in nanofluidic devices. We developed an accessible, gentle, and solution-based
photodirected surface metallization approach well-suited to forming
patterned metal films as integral structural and functional features
in thin-membrane-based SiN
x
devicesî¸for
use as electrodes or surface chemical functionalization platforms,
for exampleî¸augmenting existing device capabilities and properties
for a wide range of applications.