Selective electroless copper for VLSI interconnection

Evolution of Grain and Micro-Void Structure in Electroplated Copper Interconnects

“…[1][2][3] An important goal in producing interconnection lines which are highly reliable is to achieve films which have as large a grain size as possible, as well as being free from voids. 4) Plating methods are capable of achieving large grain sizes in Cu lines, but even in annealed films, a distribution of smaller grain sizes exists.…”

Property improvement of copper films with zirconium additive for ULSI interconnects

“…Copper has attracted increasing attention as a metallization material because of its better electrical properties as well as better electro-migration resistance in comparison to aluminum [1,2]. However, copper has a few major disadvantages for application in Ultra-Large Scale Integration (ULSI) metallization.…”

Me3SiCC–CMeCH2 copper(I) β-diketonates: Synthesis, solid state structure, and low-temperature chemical vapour deposition

“…The Chemical Vapour Deposition (CVD) of pure copper films from Lewis-base-stabilised copper(I) complexes is substantial, since this technique is considered as alternative possibility for interconnect metallisation in future generations of sub-micron integrated circuits [1][2][3], which is attributed, for example, to the low resistivity and superior electro-migration resistance of copper [4][5][6][7][8]. Copper precursors should be volatile, preferentially monomeric with low molecular weight, and should be easy to handle before and during the deposition experiments.…”