Property improvement of copper films with zirconium additive for ULSI interconnects

Wang, Ying; Yang, Xiaodong; Song, Zhongxiao; Liu, Yuntao

doi:10.1016/j.jallcom.2009.06.185

Cited by 8 publications

(2 citation statements)

References 18 publications

(18 reference statements)

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“…Due to the difficulty in achieving uniform depositions of ultra-thin barrier layers, more attention has been paid to self-formed diffusion barriers (barrierless metallization) in recent years [13][14][15]. The self-formed barrier layer offers low electrical resistivity, resistance to Cu diffusion, resistance to electromigration and compatibility with conformal deposition techniques [16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Self-Formed Diffusion Layer in Cu(Re) Alloy Film for Barrierless Copper Metallization

et al. 2022

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The barrier properties and diffusion behavior of Cu(Re) alloy films were studied. The films were deposited onto barrierless SiO2/Si by magnetron sputtering. X-ray diffraction patterns and electric resistivity results proved that the Cu(Re) alloy films without a barrier layer were thermally stable up to 550 °C. Transmission electron microscopy images and energy-dispersive spectrometry employing scanning transmission electron microscopy provided evidence for a self-formed Re-enriched diffusion layer between the Cu(Re) alloy and SiO2/Si substrate. Furthermore, the chemical states of Re atoms at the Cu(Re)/SiO2 interface were analyzed by X-ray photoemission spectroscopy. The self-formed diffusion layer was found to be composed of Re metal, ReO and ReO3. At 650 °C, the Cu(Re) layer was completely destroyed due to atom diffusion. The low electrical resistivity in combination with the high thermal stability suggests that the Cu(Re) alloy could be the ultimate Cu interconnect diffusion barrier.

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Section: Introductionmentioning

confidence: 99%

Self-Formed Diffusion Layer in Cu(Re) Alloy Film for Barrierless Copper Metallization

et al. 2022

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“…Because of the lower resistivity, better electromigration ability, lower energy consumption and higher reliability, copper is widely used as interconnected metal material for ULSI. [1][2][3] However, copper is easy to diffuse in integrated circuits, especially in the surface of silicon device such as source, drain, and gate. [4] Once copper diffuses into the device, it will produce toxic effect and cause device failure.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of titanium–nitride chemical mechanical polishing*

Feng¹,

Wang²,

Xu³

et al. 2021

Chinese Phys. B

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During the preparation of the phase change memory, the deposition and chemical mechanical polishing (CMP) of titanium nitride (TiN) are indispensable. A new acidic slurry added with sodium hypochlorite (NaClO) as an oxidizer is developed for the CMP of TiN film. It has achieved a material removal rate of 76 nm/min, a high selectivity between TiN film and silica (SiO2) films of 128:1, a selectivity between TiN film and tungsten film of 84:1 and a high surface quality. To understand the mechanism of TiN CMP process, x-ray photoelectron (XPS) spectroscope and potentiodynamic polarization measurement are performed. It is found that the mechanism of TiN CMP process is cyclic reaction polishing mechanism. In addition, both static corrosion rate and the inductively coupled plasma results indicate TiN would not be dissolved, which means that the mechanical removal process of oxide layer plays a decisive role in the material removal rate. Finally, the mechanism of TiN polishing process is given based on the analysis of surface potential and the description of blocking function.

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Property improvement of Cu–Zr alloy films with ruthenium addition for Cu metallization

et al. 2011

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Property improvement of copper films with zirconium additive for ULSI interconnects

Cited by 8 publications

References 18 publications

Self-Formed Diffusion Layer in Cu(Re) Alloy Film for Barrierless Copper Metallization

Self-Formed Diffusion Layer in Cu(Re) Alloy Film for Barrierless Copper Metallization

Mechanism of titanium–nitride chemical mechanical polishing*

Property improvement of Cu–Zr alloy films with ruthenium addition for Cu metallization

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