Selective electrochemical etching of epitaxial aluminum nitride thin film

Choi, Yongha; Choi, R. J.; Kim, Jihyun

doi:10.1016/j.apsusc.2020.145279

Cited by 13 publications

(3 citation statements)

References 28 publications

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“…In vertical device fabrication, β-Ga 2 O 3 is expected to grow on the etched group III nitrides. 108–110 For example, Yang et al 111 fabricated high reflectivity (∼92%) nanoporous GaN distributed Bragg reflectors (DBRs) by EC etching for the deposition of Eu-doped β-Ga 2 O 3 films. Due to the excellent electrical properties of the annealed films, the fabricated DBR substrates pave the way for developing a range of rare-earth-doped Ga 2 O 3 optoelectronic devices.…”

Section: Unconventional Etchingmentioning

confidence: 99%

Wet etching in β-Ga₂O₃ bulk single crystals

et al. 2022

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Section: Unconventional Etchingmentioning

confidence: 99%

Wet etching in β-Ga₂O₃ bulk single crystals

et al. 2022

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“…It is known that nanoindentation [ 1 ] has already been a relatively simple and effective method for evaluating the material property of thin films. Since the nanoindentation on the defect-free surface has been sufficiently investigated, the simulations or experiments on the thin film with defects has become a hot topic recently to get closer to real system such as surface scratches [ 2 ], surface steps [ 3 , 4 ] and surface roughness [ 5 , 6 , 7 ], where the surface roughness is usually treated as the mixed group of surface pit defects [ 8 ], which is in fact used to simulate the theoretical numerical investigations, typically and commonly seen in the nanoimprint techniques [ 9 , 10 , 11 ] and epitaxial thin films [ 12 ]. Ni yushan, et al have simulated the nanoindentation on the pitted surface and have figured out the delay effect [ 13 ], the size effect [ 14 ], and the distance effect [ 15 ] of the surface pit defect.…”

Section: Introductionmentioning

confidence: 99%

Synergy Effect and Symmetry-Induced Enhancement Effect of Surface Multi-Defects on Nanohardness by Quasi-Continuum Method

Zhang

Wang

2022

Materials

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The quasicontinuum method has been applied to probe the thin film with surface multi-defects, which is commonly seen in nanoimprint technique and bulk micromachining. Three unilaterally distributed multi-defect models and six bilaterally distributed multi-defect models of Pt thin film have been carried out in nanoindentation. The results show that the nanohardness gradually decreases as the number of unilaterally distributed multi-defects increases, along with the increasingly low decline rate of the nanohardness. The synergy effect of the unilaterally distributed multi-defects has been highly evidenced by the critical load revision for dislocation emission of Pt thin film, and it is predicted into a universal form with the synergy coefficient among the existing multi-defects for FCC metals. Moreover, the nanohardness obviously increases when the bilaterally distributed multi-defects form into symmetrical couple, and it could be even greater than the one with defect-free surface, due to the symmetry-induced enhancement effect on nanohardness. The symmetry-induced enhancement coefficient has been brought out and has well explained the symmetry-induced enhancement effect of bilaterally distributed multi-defects on the nanohardness by a prediction formula. Furthermore, the characteristic length of symmetric relations has been brought out to calculate the symmetry-induced enhancement coefficient and it has been effectively predicted to equal to the sum of the adjacent distance between the surface defect and the indenter, the defect depth near the indenter, and the defect width for FCC metal.

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“…Such chemical behavior is reported in the literature and is highly like the (Al)GaN EC process. 30,32) The 2DEG at the AlN/Si interface largely increased the bending of the energy band and hence promoted the lift-off process by increasing the voltage. It should be mentioned that the Si substrate can hardly be etched in the used KNO 3 electrolyte since no reaction of F − ions and Si-H bonds.…”

mentioning

confidence: 99%

Lift-off of GaN-based LED membranes from Si substrate through electrochemical etching

Jiang¹,

Wang²,

Liu³

et al. 2022

Appl. Phys. Express

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Semiconductor nano-membranes provide a new way to develop optical devices with better performance. Herein, we report a fabrication method of GaN-based LED membranes with a complete device structure including contact metals from Si substrate by using electrochemical etching of highly conductive AlN/Si interface, which is often naturally formed in GaN-on-Si materials. Photoluminescence and Raman scattering spectra show that the internal stress after the lift-off was effectively lightened with 1.45 GPa. Electrical measurement results show that both the leakage current and series resistance were largely decreased, strong and uniform electroluminescence further proved the well-preserved whole structure.

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Selective electrochemical etching of epitaxial aluminum nitride thin film

Cited by 13 publications

References 28 publications

Wet etching in β-Ga₂O₃ bulk single crystals

Wet etching in β-Ga₂O₃ bulk single crystals

Synergy Effect and Symmetry-Induced Enhancement Effect of Surface Multi-Defects on Nanohardness by Quasi-Continuum Method

Lift-off of GaN-based LED membranes from Si substrate through electrochemical etching

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Selective electrochemical etching of epitaxial aluminum nitride thin film

Cited by 13 publications

References 28 publications

Wet etching in β-Ga2O3 bulk single crystals

Wet etching in β-Ga2O3 bulk single crystals

Synergy Effect and Symmetry-Induced Enhancement Effect of Surface Multi-Defects on Nanohardness by Quasi-Continuum Method

Lift-off of GaN-based LED membranes from Si substrate through electrochemical etching

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Wet etching in β-Ga₂O₃ bulk single crystals

Wet etching in β-Ga₂O₃ bulk single crystals