Selective Chemical Vapor Deposition

Holleman, J.

doi:10.1007/978-94-010-0353-7_8

Cited by 5 publications

(11 citation statements)

References 24 publications

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“…Figure b also shows that when two different substrates are available for nucleation and deposition, the differences in Gibbs free energy change during nucleation can describe and quantify the expected reaction selectivity. Selectivity is achieved when the reactant chemical potentials and the surface and interfacial free energies enable nuclei with critical size to form rapidly on one surface and not on another. , …”

Section: Thin Film Nucleation During Vapor Deposition: Definition And...mentioning

confidence: 99%

“…Area-selective deposition refers to any chemical or physical process that controllably forms a desired material layer on a desired “growth” region of an exposed surface without forming a layer on other adjacent “nongrowth” areas of different compositions or surface terminations. − The growth and nongrowth regions can be differentiated by material composition, surface termination, lattice structure, or physical topography. When the film forms on all exposed surfaces, it is referred to as uniform or “blanket” deposition.…”

Section: Introductionmentioning

confidence: 99%

“…Vapor-based processes for ASD include chemical vapor deposition, CVD, atomic layer deposition, ALD, and molecular layer deposition, MLD, with most recent studies addressing area-selective ALD. Several previous articles have reviewed selective deposition by CVD ,− ,,, and by ALD. − Also, many excellent articles describe basic ALD reactions and applications, − as well as how ALD impacts outstanding challenges in semiconductor manufacturing. , This article expands upon previous reviews to present a cohesive examination of ASD, including discussion of metals, semiconductors, dielectrics, and organic thin films, as well as provide a contrast between ALD, CVD, and related processes for ASD. Interest also includes mechanisms in vapor–solid thin film nucleation, as well as quantification and modeling of ASD.…”

Section: Introductionmentioning

confidence: 99%

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Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

Parsons

Clark²

2020

Chem. Mater.

226

304

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This review provides an overview of area-selective thin film deposition (ASD) with a primary focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic layer deposition (ALD). Areaselective deposition has been successfully implemented in microelectronic processes, but most approaches to date rely on high-temperature reactions to achieve the desired substrate sensitivity. Continued size and performance scaling of microelectronics, as well as new materials, patterning methods, and device fabrication schemes are seeking solutions for new low-temperature (<400 °C) ASD methods for dielectrics, metals, and organic thin films. To provide an overview of the ASD field, this article critically reviews key challenges that must be overcome for ASD to be successful in microelectronics and other fields, including descriptions of current process application needs. We provide an overview of basic mechanisms in film nucleation during CVD and ALD and summarize current known ASD approaches for semiconductors, metals, dielectrics, and organic materials. For a few key materials, selectivity is quantitatively compared for different reaction precursors, giving important insight into needs for favorable reactant and reaction design. We summarize current limitations of ASD and future opportunities that could be achieved using advanced bottom-up atomic scale processes.

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Section: Thin Film Nucleation During Vapor Deposition: Definition And...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

Parsons

Clark²

2020

Chem. Mater.

226

304

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“…During “front-end” processing, temperatures can exceed 700 °C, and selective silicon epitaxy is widely used to self-align the source/drain contacts to silicon channels. Using high temperatures, defect nuclei are effectively avoided by optimizing reaction thermodynamics. − ,− For selective silicon epitaxy, a single set of gas-phase precursors (often including a mixture of chlorosilanes, HCl, and hydrogen) can allow favorable silicon film growth on receptive regions, while, in neighboring regions, the same reactants favor formation of only volatile silicon products, such as SiCl 2 . , In this way, self-aligned selective epitaxy avoids defects using thermodynamically favorable reactions that locally consume the deposition reactant in the regions where growth is not desired.…”

mentioning

confidence: 99%

Multimaterial Self-Aligned Nanopatterning by Simultaneous Adjacent Thin Film Deposition and Etching

et al. 2021

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Printed component sizes in electronic circuits are approaching 10 nm, but inherent variability in feature alignment during photolithography poses a fundamental barrier for continued device scaling. Deposition-based self-aligned patterning is being introduced, but nuclei defects remain an overarching problem. This work introduces low-temperature chemically self-aligned film growth via simultaneous thin film deposition and etching in adjacent regions on a nanopatterned surface. During deposition, nucleation defects are avoided in nongrowth regions because deposition reactants are locally consumed via sacrificial etching. For a range of materials and process conditions, thermodynamic modeling confirms that deposition and etching are both energetically favorable. We demonstrate nanoscale patterning of tungsten at 220 °C with simultaneous etching of TiO2. Area selective deposition (ASD) of the sacrificial TiO2 layer produces an orthogonal sequence for self-aligned patterning of two materials on one starting pattern, i.e., TiO2 ASD on SiO2 followed by W ASD on Si–H. Experiments also show capacity for self-aligned dielectric patterning via favorable deposition of AlF3 on Al2O3 at 240 °C with simultaneous atomic layer etching of sacrificial ZnO. Simultaneous deposition and etching provides opportunities for low-temperature bottom-up self-aligned patterning for electronic and other nanoscale systems.

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“…The total volume of nucleated silicon remains negligible in comparison to the space between the dots (i.e., "voids"), therefore no information about Si-ND could be extracted from SE measurements until the ratio Si-ND/voids is below the threshold sensitivity of the equipment. Therefore, in [72] it is proposed to call the described delay as "apparent incubation time".…”

Section: Spectroscopic Ellipsometry Measurementsmentioning

confidence: 99%

Electronic devices fabricated at CMOS backend-compatible temperatures

Brunets¹

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Selective Chemical Vapor Deposition

Cited by 5 publications

References 24 publications

Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

Multimaterial Self-Aligned Nanopatterning by Simultaneous Adjacent Thin Film Deposition and Etching

Electronic devices fabricated at CMOS backend-compatible temperatures

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