Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

Abstract

This review provides an overview of area-selective thin film deposition (ASD) with a primary focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic layer deposition (ALD). Areaselective deposition has been successfully implemented in microelectronic processes, but most approaches to date rely on high-temperature reactions to achieve the desired substrate sensitivity. Continued size and performance scaling of microelectronics, as well as new materials, patterning methods, and device fabrication schemes are seeking solutions for new low-temperature (<400 °C) ASD methods for dielectrics, metals, and organic thin films. To provide an overview of the ASD field, this article critically reviews key challenges that must be overcome for ASD to be successful in microelectronics and other fields, including descriptions of current process application needs. We provide an overview of basic mechanisms in film nucleation during CVD and ALD and summarize current known ASD approaches for semiconductors, metals, dielectrics, and organic materials. For a few key materials, selectivity is quantitatively compared for different reaction precursors, giving important insight into needs for favorable reactant and reaction design. We summarize current limitations of ASD and future opportunities that could be achieved using advanced bottom-up atomic scale processes.

Ordered mesoporous metal oxides for electrochemical applications: correlation between structure, electrical properties and device performance

“…[294][295][296] In case of partial overcoating, one takes advantage of differences in surface chemistry of the solid (area-selective deposition, also referred to as AS-ALD). 292,[297][298][299][300] In the following, we focus on some selected examples, where ALD has been used to produce a uniform oxide coating in order to modify the structural and/or electrical properties of mesoporous oxides.…”

Area Selective Chemical Vapor Deposition of Metallic Films using Plasma Electrons as Reducing Agents

“…In other words, the ability of depositing films on specifically selected areas of a pattered surface of a substrate. ASD allows film deposition in a broad range of important fields, especially in micro/nanoscale electronics and catalysis applications [83][84][85][86].…”

Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption

“…Area-selective deposition (ASD), including area-selective atomic layer deposition (ALD), is considered a prospective way to downscale nano-electronics [1][2][3]. ALD takes advantage of self-limiting reactions to achieve conformal thin film growth with atomic-level thickness control [4].…”