Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing

Shinoda, Kazunori; Miyoshi, Norikazu; Kobayashi, Hiroyuki; Miura, Masashi; Kurihara, Masaru; Maeda, Kenji; Negishi, Naoki; Sonoda, Yusuke; Tagaya, Motohiro; Yasui, Naoki; Izawa, Masaru; Ishii, Yohei; Okuma, Kazumasa; Saldana, Tiffany; Manos, Jim; Ishikawa, Kenji; Hori, Masaru

doi:10.1088/1361-6463/aa6874

Cited by 23 publications

(20 citation statements)

References 59 publications

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“…The foregoing discussion stresses that contrary to deposition techniques, advanced methods capable of a comparable controllability and providing accuracy of III–V materials removal have not yet been developed, primarily because of the lack of the universal process as well as diagnostics for in situ monitoring of digital etching processes. ,, …”

Section: Introductionmentioning

confidence: 99%

“…The foregoing discussion stresses that contrary to deposition techniques, advanced methods capable of a comparable controllability and providing accuracy of III−V materials removal have not yet been developed, primarily because of the lack of the universal process as well as diagnostics for in situ monitoring of digital etching processes. 22,29,30 We have recently demonstrated that so-called digital photocorrosion (DIP) of GaAs/AlGaAs nanoheterostructures could be monitored with photoluminescence (PL) emitted by such nanoheterostructures. 31,32 The sensitivity of DIP to the external perturbations induced by electrically charged molecules allowed the detection of the presence of negatively charged bacteria immobilized in the vicinity of the GaAs/ AlGaAs nanoheterostructure surfaces, 31,33 as well as the monitoring of bacterial response to antibiotics in an H 2 O environment.…”

Section: Introductionmentioning

confidence: 99%

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Photo-Atomic Layer Etching of GaAs/AlGaAs Nanoheterostructures

Aziziyan

Sharma

Dubowski

2019

ACS Appl. Mater. Interfaces

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Photo-atomic layer etching (photo-ALE) of GaAs and AlGaAs semiconductors was investigated in deionized H2O and aqueous solution of NH4OH under weak excitation conditions (P ≈ 20 mW/cm2). The process is based on digital photocorrosion in a processed solution and a negligible corrosion during the light-off phase employed for dissolution of the photocorrosion products. An inductively coupled plasma mass spectroscopy (ICP-MS) analysis revealed that photo-ALE of GaAs in an aqueous solution of NH4OH proceeds linearly with the number of reaction cycles, typically at ∼0.1 nm/cycle, and with the light-off phase as short as 22 s sufficient to entirely dissolve the photocorrosion products generated during a 3 s irradiation. In agreement with the ICP-MS data, the constant photo-ALE rates in NH4OH were also demonstrated in situ with the photoluminescence measurements. Our results suggest that the congruent decomposition of III–V materials and the etching of deep structures with atomic layer resolution could be facilitated by switching in situ between different etching environments.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photo-Atomic Layer Etching of GaAs/AlGaAs Nanoheterostructures

Aziziyan

Sharma

Dubowski

2019

ACS Appl. Mater. Interfaces

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“…[29][30][31][32][33] Very recently, the thermal cyclic etching of SiN has also been realized. [34][35][36] In principle, a thin surface modified layer comprising (NH 4 ) 2 SiF 6 forms on the surface in a self-limiting manner to protect a material from etching by preventing for the further exposure to etchants and can be removed by thermal annealing. 35) Additional new processing techniques have been reported that involve chemically assisted ion beam etching (CAIBE) using Cl 2 plasma for etching GaAs.…”

Section: Advances In Atomic Layer Processing For Emerging Materialsmentioning

confidence: 99%

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Ishikawa

Karahashi

Ichikı

et al. 2017

Jpn. J. Appl. Phys.

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In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.

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“… 18 Moreover, isotropic ALE has been proposed for achieving high-resolution nanoimprint lithography 19 and lateral etching in 3D-NAND flash memories fabrication. 20 ALE has also great potential in replacing wet etching processes where the liquid etchants with their critical surface tensions may cause capillary effects that make nanometer-sized patterns collapse. 20 Furthermore, ALE may also find applications in fine-tuning the transport properties of NW–metal contacts by nanoscale removal of the native semiconductor material at the edge of the nanocontact.…”

Section: Introductionmentioning

confidence: 99%

“…Isotropic ALE is deemed essential for patterning of the gate spacer in future gate-all-around FETs where highly selective and conformal material removal is required . Moreover, isotropic ALE has been proposed for achieving high-resolution nanoimprint lithography and lateral etching in 3D-NAND flash memories fabrication . ALE has also great potential in replacing wet etching processes where the liquid etchants with their critical surface tensions may cause capillary effects that make nanometer-sized patterns collapse .…”

Section: Introductionmentioning

confidence: 99%

Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O₂ Plasma

Mameli

Verheijen

Mackus

et al. 2018

ACS Appl. Mater. Interfaces

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Atomic layer etching (ALE) provides Ångström-level control over material removal and holds potential for addressing the challenges in nanomanufacturing faced by conventional etching techniques. Recent research has led to the development of two main classes of ALE: ion-driven plasma processes yielding anisotropic (or directional) etch profiles and thermally driven processes for isotropic material removal. In this work, we extend the possibilities to obtain isotropic etching by introducing a plasma-based ALE process for ZnO which is radical-driven and utilizes acetylacetone (Hacac) and O2 plasma as reactants. In situ spectroscopic ellipsometry measurements indicate self-limiting half-reactions with etch rates ranging from 0.5 to 1.3 Å/cycle at temperatures between 100 and 250 °C. The ALE process was demonstrated on planar and three-dimensional substrates consisting of a regular array of semiconductor nanowires (NWs) conformally covered using atomic layer deposition of ZnO. Transmission electron microscopy studies conducted on the ZnO-covered NWs before and after ALE proved the isotropic nature and the damage-free characteristics of the process. In situ infrared spectroscopy measurements were used to elucidate the self-limiting nature of the ALE half-reactions and the reaction mechanism. During the Hacac etching reaction that is assumed to produce Zn(acac)2, carbonaceous species adsorbed on the ZnO surface are suggested as the cause of the self-limiting behavior. The subsequent O2 plasma step resets the surface for the next ALE cycle. High etch selectivities (∼80:1) over SiO2 and HfO2 were demonstrated. Preliminary results indicate that the etching process can be extended to other oxides such as Al2O3.

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Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing

Cited by 23 publications

References 59 publications

Photo-Atomic Layer Etching of GaAs/AlGaAs Nanoheterostructures

Photo-Atomic Layer Etching of GaAs/AlGaAs Nanoheterostructures

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O₂ Plasma

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Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing

Cited by 23 publications

References 59 publications

Photo-Atomic Layer Etching of GaAs/AlGaAs Nanoheterostructures

Photo-Atomic Layer Etching of GaAs/AlGaAs Nanoheterostructures

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma

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Product

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Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O₂ Plasma