Abstract:We report the first selective-area growth of high quality InAs(Sb)/GaSb core-shell nanowires on Si substrates using metal-organic chemical vapor deposition (MOCVD) without foreign catalysts. Transmission electron microscopy (TEM) analysis reveals that the overgrowth of the GaSb shell is highly uniform and coherent with the InAs(Sb) core without any misfit dislocations. To control the structural properties and reduce the planar defect density in the self-catalyzed InAs core nanowires, a trace amount of Sb was i… Show more
“…Although the growth of Sb-based III-V NWs is more difficult than that of other III-V NWs, both 'top-down' and 'bottomup' approaches have been developed for the controllable growth of high-quality thin Sb-based III-V NWs in the past decade [6,42,52,63,[106][107][108][109][110][111]. 'Top-down' approach has been promoted in microelectronic industry.…”
Section: Recent Advances In the Synthesis Of Sb-based Iii-v Nwsmentioning
confidence: 99%
“…However, it was rare to study the optoelectronic application of these liquid-grown InSb NWs, probably resulting from their poor crystallinity. Compared to the liquid-grown method, vapor-grown methods including molecular beam epitaxy (MBE) [58][59][60], metal organic vapor phase epitaxy (MOVPE) [21,22,61,62], metal organic chemical vapor deposition (MOCVD) [63,64] and chemical vapor deposition (CVD) [6,41,65], have been adopted commonly to controllable growth of Sb-based III-V semiconductor NWs. Generally, metal particles are used as catalysts for the vapor growth of Sb-based III-V NWs, following two famous growth mechanism of vapor-liquid-solid (VLS) [66,67] and vapor-solid-solid (VSS) [68,69].…”
Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sbbased III-V nanowires (NWs) attracted significant interests in high speed electronics, longwavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effecttransistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.
“…Although the growth of Sb-based III-V NWs is more difficult than that of other III-V NWs, both 'top-down' and 'bottomup' approaches have been developed for the controllable growth of high-quality thin Sb-based III-V NWs in the past decade [6,42,52,63,[106][107][108][109][110][111]. 'Top-down' approach has been promoted in microelectronic industry.…”
Section: Recent Advances In the Synthesis Of Sb-based Iii-v Nwsmentioning
confidence: 99%
“…However, it was rare to study the optoelectronic application of these liquid-grown InSb NWs, probably resulting from their poor crystallinity. Compared to the liquid-grown method, vapor-grown methods including molecular beam epitaxy (MBE) [58][59][60], metal organic vapor phase epitaxy (MOVPE) [21,22,61,62], metal organic chemical vapor deposition (MOCVD) [63,64] and chemical vapor deposition (CVD) [6,41,65], have been adopted commonly to controllable growth of Sb-based III-V semiconductor NWs. Generally, metal particles are used as catalysts for the vapor growth of Sb-based III-V NWs, following two famous growth mechanism of vapor-liquid-solid (VLS) [66,67] and vapor-solid-solid (VSS) [68,69].…”
Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sbbased III-V nanowires (NWs) attracted significant interests in high speed electronics, longwavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effecttransistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.
“…3c. This phenomenon has been observed in core–shell nanowires of other material systems [29–31], and the behavior highlights the need to improve the crystal quality of the self-catalyzed InGaAs nanowires.Fig. 3 a HRTEM image of the bare InGaAs nanowire (Xv = 35%) acquired from the < 110> zone axis.…”
We report on the growth and characterization of InGaAs/InP core–shell nanowires on Si–(111) substrates by metal-organic chemical vapor deposition (MOCVD). The strain at the core–shell interface induced by the large lattice mismatch between the InGaAs core and InP shell materials has strong influence on the growth behavior of the InP shell, leading to the asymmetric growth of InP shell around the InGaAs core and even to the bending of the nanowires. Transmission electron microscopy (TEM) measurements reveal that the InP shell is coherent with the InGaAs core without any misfit dislocations. Furthermore, photoluminescence (PL) measurements at 77 K show that the PL peak intensity from the InGaAs/InP core−shell nanowires displays a ∼ 100 times enhancement compared to the only InGaAs core sample without InP shell due to the passivation of surface states and effective carrier confinement resulting from InP shell layer. The results obtained here further our understanding of the growth behavior of strained core–shell heterostructure nanowires and may open new possibilities for applications in InGaAs/InP heterostructure nanowire-based optoelectronic devices on Si platform.
“…1). [34] Furthermore, the lack of a catalyst droplet leads to the benefit of avoiding the reservoir effect, which can cause non-abrupt interfaces between different sections of the NW structure. The reservoir effect will be further described later.…”
Over the past decades, the progress in the growth of materials which can be applied to cutting-edge technologies in the field of electronics, optoelectronics and energy harvesting has been remarkable. Among the various materials, group III-V semiconductors are of particular interest and have been widely investigated due to their excellent optical properties and high carrier mobility. However, the integration of III-V structures as light sources and numerous other optical components on Si, which is the foundation for most optoelectronic and electronic integrated circuits, has been hindered by the large lattice mismatch between these compounds. This mismatch results in substantial amounts of strain and degradation of the performance of the devices. Nanowires (NWs) are unique nanostructures that induce elastic strain relaxation, allowing for the monolithic integration of III-V semiconductors on the cheap and mature Si platform. A technique that ensures flexibility and freedom in the design of NW structures is the growth of ternary III-V NWs, which offer a tuneable frame of optical characteristics, merely by adjusting their nominal composition. In this review, we will focus on the recent progress in the growth of ternary III-V NWs on Si substrates. After analysing the growth mechanisms that are being employed and describing the effect of strain in the NW growth, we will thoroughly inspect the available literature and present the growth methods, characterization and optical measurements of each of the III-V ternary alloys that have been demonstrated. The different properties and special treatments required for each of these material platforms are also discussed. Moreover, we will present the results from the works on device fabrication, including lasers, solar cells, water splitting devices, photodetectors and FETs, where ternary III-V NWs were used as building blocks. Through the current paper, we exhibit the up-to-date state in this field of research and summarize the important accomplishments of the past few years.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
