Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

Abstract

Low-pressure MOCVD has been used to grow layers of inP, InGaAs, GalnAsP and quantum weii material on planar substrates patterned with silica masks. The thicknesses and, where relevant, the compositions of these selectively grown layers were investigated by optical and scanning electron microscopy, surface profiling, energy dispersive x-ray analysis, secondary-ion mass spectroscopy and spatially resolved photoluminescence. The epitaxial layers were found to be both thicker and richer in indium in the vicinity of a mask. The perturbations in the thickness and composition of material grown around a given mask pattern were independent of the orientation of the pattern with respect to the gas flow and the crystallographic axes of the substrate. Lateral movement of material from the masked regions to the surrounding areas was found to take place in the gas above the wafer surface. A gas-phase diffusion model based on Laplace's equation was used to analyse the thickness and compositional variations caused by selective growth. The emission wavelength of selectively grown InGaAsl GalnAsP MOW material was shifted by over 100 nm without degradation in emission efficiency. The lasing wavelength of Fabry-Pbrot lasers fabricated on such material was increased by a similar amount without degradation of threshold current.

Reactor-scale uniformity of selective-area performance in InGaAsP system

“…A promising solution is to integrate optical devices in a monolithic semiconductor chip. Selective-area metal organic vapor phase epitaxy (SA-MOVPE) is a promising technique for the fabrication of integrated semiconductor optical devices [1][2][3][4]. As the integration of a device proceeds, the design of the mask pattern becomes mandatory.…”

Selective-area MOVPE growth for 10Gbit/s electroabsorption modulator integrated with a tunable DBR laser

“…Selective area growth (SAG) is an important technique for monolithic integration of photonic devices in III-V compound semiconductor [3,4]. The SAG using metalorganic vapor phase epitaxy (MOVPE) can realize bandgap engineering on a single wafer due to the growth rate enhancement and composition variation from the difference of vapor phase diffusion length and surface migration length of group III species by changing the dielectric mask geometry [5].…”

Polycrystals growth on dielectric masks during InP/GaAs selective MOVPE

“…Selective-area growth (SAG) of InGaAsP using metalorganic vapor-phase epitaxy (MOVPE) is a promising technology for monolithic integration of optoelectronic integrated circuits [1]. With a single growth on properly designed mask patterns using a dielectric thin film, it is possible to form passive and active devices simultaneously.…”