Polycrystals growth on dielectric masks during InP/GaAs selective MOVPE

Reactor-scale uniformity of selective-area performance in InGaAsP system

“…As the integration of a device proceeds, the design of the mask pattern becomes mandatory. For this purpose, we developed a simulation tool that can predict the modulation of photoluminescence (PL) wavelength from the multiple quantum wells (MQWs) brought by a given shape of masks [5][6][7][8][9][10]. When we apply this SA-MOVPE technique to commercial production, large-scale reactors are necessary.…”

Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanism

“…The growth rate enhancement (GRE) for the epilayer is calculated by the thickness in the SAG stripes divided by that in the planar area, where the growth is not affected by masks. In all of the experiments, there is no GaAs polycrystal generated on the surface of SiO 2 masks, which may change GRE profile and may miss-lead the SAG analysis [15]. …”

Effect of group V partial pressure on the kinetics of selective area MOVPE for GaAs on (100) exact and misoriented substrate

“…Growth rate enhancement for the epilayer was obtained by the thickness in the SAG area divided by that in the planar area where the growth was not disturbed by the existence of masks. In all of the experiments, there was no GaAs polycrystal generated on the surface of SiO 2 masks [8,9]. The value of k s has been extracted by analyzing the growth rate enhancement profile in wide-stripe SAG and comparing with result from 2D numerical simulation [7].…”

“…Generally, it is difficult to collect surface reaction kinetics information in such regions. Fortunately, our recent research showed that wide-stripe SAG also provides a useful approach to obtain surface reaction rate constant (k s ) even in this mass transport limited region [7][8][9]. It makes us able to build up the database of k s for reaction species, which is useful to reveal what is happening on the growing surface, and can help us to predict and control the properties of semiconductor materials and desired devices by SAG technique.…”