Selective area growth of InAs quantum dots with a metal mask towards optical integrated circuit devices

Ozaki, Nobuhiko; Takata, Yoshiaki; Ohkouchi, Shunsuke; Sugimoto, Yoshimasa; Nakamura, Y.; Ikeda, Naoki; Asakawa, Kiyoshi

doi:10.1016/j.jcrysgro.2006.11.075

Cited by 22 publications

(14 citation statements)

References 8 publications

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“…The selective-area growth of InAs-QDs on a GaAs substrate was carried out by using the rotational MM method combined with conventional molecular beam epitaxy (MBE) [11,12]. The rotational mask enables the selective-area growth and controls the emission wavelengths of the QD ensembles, as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…On the other hand, we have so far developed a technique for the selective-area growth of QDs [11] and have succeeded in controlling their emission wavelengths using a rotational metal mask (MM) [12]. This technique is considered to be applicable to not only QD-based all-optical switches [13] but also multicolor-QD-based broadband light sources.…”

Section: Introductionmentioning

confidence: 99%

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Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light source

Ozaki¹,

Takeuchi²,

Ohkouchi³

et al. 2011

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light source

Ozaki¹,

Takeuchi²,

Ohkouchi³

et al. 2011

Journal of Crystal Growth

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“…29 /lm in SW -1 and QD ensemble with wavelength A z= 1.31 /lm in SW-2 [6]. For these purposes, selective-area-growth (SAG) of QDs has been developed by using a metal-mask (MM) method [14,15]. The MM method enables us to grow the QD ensemble selectively in a required area of several tens-to several hundreds-/lm in size.…”

Section: Research Advancementmentioning

confidence: 99%

Evolution of nanophotonics from semiconductor photonic crystal device to metal/semiconductor plasmonic device

Asakawa

Sugimoto

Ikeda

et al. 2010

2010 International Conference on Advanced Optoelectronics and Lasers

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This paper reviews our recent activities on nanophotonics based on a photonic crystal (PC)/quantum dot (QD)-combined structure for an all-optical device and a metal/semiconductor composite structure using surface plasmon (SP) and negative refractive index material (NIM). The former structure contributes to an ultrafast signal processing component by virtue of new PC design and QD selective-area-growth technologies, while the latter provides a new RGB color filter with a high precision and optical beam-steering device with a wide steering angle.

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“…This implies that QDs should be selective-area-grown with different wavelengths at different sites. For this purpose, a selective area growth (SAG) technique has been developed by using a metal-mask (MM)/MBE method (7,8). As shown in Fig.…”

Section: Selective-area-growth Of Quantum Dotsmentioning

confidence: 99%

Photonic Crystal and Quantum Dot Technologies for Ultra-small and Ultra-fast All-optical Flip-flop

Ozaki¹,

Ikeda²,

Watanabe³

et al. 2009

ECS Trans.

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Nano-photonic technologies of GaAs-based two-dimensional photonic crystal (2DPC) slab waveguides and InAs quantum dots (QDs) are reviewed for symmetric Mach-Zehnder type, ultra-small and ultra-fast all-optical switch (PC-SMZ) and optical flip-flop device (PC-FF). In the 1st phase of this work, ultra-fast (~ps) and ultra-low energy (~100 fJ) switching has been demonstrated using the PC-SMZ chip with 600 μm × 300 μm in size. In the 2nd phase, the concept of the PC-FF based on the dual PC-SMZs for providing a latch function has been proposed for a future ultra-fast optical digital processor. One of the priority subjects is to establish a new design method, i.e., topology optimization method of the 2DPC waveguide with wide/flat bandwidth, high transmittance and low reflectivity. Another one is to develop a selective-area-MBE growth technique with a metal-mask method for high-density and highly uniform InAs QDs with different absorption wavelengths in different areas.

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Selective area growth of InAs quantum dots with a metal mask towards optical integrated circuit devices

Cited by 22 publications

References 8 publications

Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light source

Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light source

Evolution of nanophotonics from semiconductor photonic crystal device to metal/semiconductor plasmonic device

Photonic Crystal and Quantum Dot Technologies for Ultra-small and Ultra-fast All-optical Flip-flop

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