Selective area epitaxy of GaN for electron field emission devices

Kapolnek, D.; Underwood, R.D.; Keller, B.P.; Keller, S.; DenBaars, Steven P.; Mishra, Umesh K.

doi:10.1016/s0022-0248(96)00620-3

Cited by 42 publications

(18 citation statements)

References 3 publications

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“…Kato et al [2] investigated first selective area growth (SAG) experiments in MOVPE on 10-mm-wide line-patterned GaN/ sapphire substrates by using SiO 2 masks. Then Kitamura et al [3] and Kapolnek et al [4] have performed SAG-MOVPE on dotpatterned GaN/sapphire substrates by growing 5-mm-wide GaN hexagonal pyramids for three-dimensional microstructures. Despite the lattice-mismatch and the difference in the coefficient of thermal expansion between sapphire and GaN, sapphire template appears as an alternative for the epitaxial lateral overgrowth (ELO) of GaN layers.…”

Section: Introductionmentioning

confidence: 99%

A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)

Tourret

Gourmala

André

et al. 2009

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)

Tourret

Gourmala

André

et al. 2009

Journal of Crystal Growth

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“…1 Introduction Selective area growth (SAG) of GaN by MOVPE has been demonstrated at the micro-scale [1][2][3]. In this regime, the morphology of GaN grown through arrays of patterned pores can be controlled by growth conditions such as growth temperature, reactor pressure, V/III ratio [1,2] and doping [3].…”

mentioning

confidence: 99%

“…In this regime, the morphology of GaN grown through arrays of patterned pores can be controlled by growth conditions such as growth temperature, reactor pressure, V/III ratio [1,2] and doping [3]. It is common that hexagonal pyramids with {1011} facets can easily form in the pores due to the slow growth rate on the facets [1,2]. More and more interest has shifted to nano-structure growth on nanopatterned templates due to their potential applications.…”

mentioning

confidence: 99%

Variations in mechanisms of selective area growth of GaN on nano‐patterned substrates by MOVPE

Liu

Shields

Chen

et al. 2010

Phys. Status Solidi (c)

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The growth behaviour of GaN selective area growth (SAG) by MOVPE on two types of nano‐patterned GaN substrates has been investigated. Samples were characterized by SEM, AFM and TEM. Results indicate that well formed nano‐pyramids with base size of ∼150 nm, and sharp tips are readily grown through mask patterns defined by electron beam lithography (EBL). A growth rate of nearly zero on the {10$ \bar 1 $1} nano‐facets, effectively self‐limiting growth (SLG), has been observed under a wide range of growth conditions using a conventional growth mode. In contrast, pulsed growth is able to change the SLG behaviour, and thereby control the size of pyramids, even to coalesce the pyramids to form flat, smooth GaN films. SLG‐like behaviour of GaN SAG on patterns defined by nano‐imprint lithography (NIL) is also observed and enabled nano‐pyramids to form. However, GaN SAG on NIL patterns shows accelerated growth in some pores at the early stage of the growth. This accelerated growth is attributed to the possible presence of screw‐type dislocations in the pore. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…18 Periodic arrays of circular mask openings have been used to produce microor nano-dots for applications such as LEDs and energy selective contacts for hot carrier solar cells. [19][20][21][22][23][24][25][26][27][28] For LED applications, micro-ring emitters can give nearly double the efficiency of micro-dot emitters. 29 Therefore, micro-ring emitters have been grown from ring-shaped mask openings using selective area epitaxy for this application.…”

Section: Introductionmentioning

confidence: 99%

Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

Aagesen

Coltrin

Han

et al. 2015

Journal of Applied Physics

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Articles you may be interested inGrowth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. The model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. The model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications. V C 2015 AIP Publishing LLC.

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Selective area epitaxy of GaN for electron field emission devices

Cited by 42 publications

References 3 publications

A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)

A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)

Variations in mechanisms of selective area growth of GaN on nano‐patterned substrates by MOVPE

Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

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