A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)

Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE

“…7c), most likely {1 1 À 2 2} to be consistent with Fig. 4a and the sidefaces found by Tourret et al [15] by selective area growth HVPE. At the outer edges of the larger islands in Fig.…”

“…4a. These are the same facets as found by Tourret et al [15] using SAG-HVPE. The top surface is (0001)-oriented and its morphology appears smooth, though DICM and interferometry reveal large macrosteps, up to 100 nm in height, running along the surface (Fig.…”

Demonstration of crystal–vapor equilibrium leading to growth blockade of GaN during selective area growth

“…Analysis of growth mechanisms of selective HVPE growth SAG-HVPE experimental investigations as a function of the carrier gas composition, the growth temperature, the stripe orientation of /1120S or /1100S patterned GaN substrates were previously carried out. They have allowed us to build cartographies of GaN morphologies grown by HVPE selective growth previously published in Journal of Crystal Growth [26,27]. This paper focuses on domains of the cartographies that exhibit drastic limitation of vertical and lateral growth rates ( Fig.…”

Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures

“…In each case, the total flow rate was kept constant and equal to 2623 sccm with the following composition: 300 sccm for the NH 3 , 10-60 sccm for the HCl flow diluted in 83 sccm of nitrogen on the liquid gallium source and finally 40 sccm for the additional HCl flow. The appropriate hydrogen concentration of the carrier gas was deduced from previous work [28]. The ratio of the hydrogen flow rate in the carrier gas to the total flow rate, RH 2 was kept equal to 0.19.…”

“…For this, we carried out complete HVPE experimental investigations from the analysis of the type of substrate (GaN templates/c-plane sapphire or bare c-plane sapphire), stripe orientations /1 1 À 2 0S and /1 À 1 0 0S, carrier gas composition [28], growth temperature and V/III ratio influence. From this cartography and by fixing the appropriate experimental parameters, growth of GaN quasi-substrates or GaN nano-structures is totally controlled.…”