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2002
DOI: 10.1016/s0026-2714(02)00042-2
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Selected failure mechanisms of modern power modules

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Cited by 799 publications
(432 citation statements)
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“…Several papers have also been published on the topic of power modules accelerated ageing tests (thermal cycling and power cycling) in order to estimate the level of semiconductors expectancy lifetime [17]- [18] and to study the failure mechanisms and effects [18]- [20]- [21]. It has been reported that repetitive failures have two different sources: an external one which can be, for example, linked to faulty control signal [22] and an internal one, linked to physical degradation of the power semiconductor.…”
Section: Iipower Electronic Architecture Tolerant To Semiconductor Fmentioning
confidence: 99%
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“…Several papers have also been published on the topic of power modules accelerated ageing tests (thermal cycling and power cycling) in order to estimate the level of semiconductors expectancy lifetime [17]- [18] and to study the failure mechanisms and effects [18]- [20]- [21]. It has been reported that repetitive failures have two different sources: an external one which can be, for example, linked to faulty control signal [22] and an internal one, linked to physical degradation of the power semiconductor.…”
Section: Iipower Electronic Architecture Tolerant To Semiconductor Fmentioning
confidence: 99%
“…It has been reported that repetitive failures have two different sources: an external one which can be, for example, linked to faulty control signal [22] and an internal one, linked to physical degradation of the power semiconductor. Examples of these internal failures are: bond wire lift off, gate leakage failure and damages on semiconductors chip and solder [18], SiAl contact ageing [21], electro-migration effect [20], latch-up [23]. These internal failures can modify the operating state of the semiconductor and induce abnormal behavior like OC or SC states.…”
Section: Iipower Electronic Architecture Tolerant To Semiconductor Fmentioning
confidence: 99%
“…Multichip modules for high-power IGBT devices are complex multilayered structures consisting of different materials, which have to provide a good mechanical stability, good electrical insulation properties, and good thermal conduction capabilities [1].…”
Section: Introductionmentioning
confidence: 99%
“…Acceleration and deceleration cycles during a train commercial service, together with the IGBTs and diode switching, produce thermal cycling phenomena inside the module. These internal temperature variations associated to the mismatch of the thermal expansion coefficients (CTE) and the thickness differences between the layers in contact induce important shearing constrains at the layer interfaces [1]. For medium and high power component used in traction application, thermal cycling is the main failure cause [2].…”
Section: Introductionmentioning
confidence: 99%
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