“…Several papers have also been published on the topic of power modules accelerated ageing tests (thermal cycling and power cycling) in order to estimate the level of semiconductors expectancy lifetime [17]- [18] and to study the failure mechanisms and effects [18]- [20]- [21]. It has been reported that repetitive failures have two different sources: an external one which can be, for example, linked to faulty control signal [22] and an internal one, linked to physical degradation of the power semiconductor.…”
Section: Iipower Electronic Architecture Tolerant To Semiconductor Fmentioning
confidence: 99%
“…It has been reported that repetitive failures have two different sources: an external one which can be, for example, linked to faulty control signal [22] and an internal one, linked to physical degradation of the power semiconductor. Examples of these internal failures are: bond wire lift off, gate leakage failure and damages on semiconductors chip and solder [18], SiAl contact ageing [21], electro-migration effect [20], latch-up [23]. These internal failures can modify the operating state of the semiconductor and induce abnormal behavior like OC or SC states.…”
Section: Iipower Electronic Architecture Tolerant To Semiconductor Fmentioning
Abstract-This paper deals with a synthesis of Space Vector PWM control methods applied for a H-bridge inverter feeding a 3-phase Permanent Magnet Synchronous Machine in Electric Vehicle application. First, a short survey of existing power converter architectures, especially those adapted to degraded operating modes, is presented. Standard SVPWM control methods are compared with three innovative ones using EV-drive specifications in the normal operating mode. Then, a rigorous analysis of the margins left in the control strategy is presented for a semiconductor switch failure to fulfill degraded operating modes. Finally, both classic and innovative strategies are implemented in numerical simulation; their results are analyzed and discussed.
Index Terms-Motor drives, Inverters, Space vector pulse width modulation (SVPWM), Permanent magnet machines, Semiconductor device reliability
I.INTRODUCTIONPower converters are increasingly used in automotive applications for many reasons such as power conditioning, power management, and consumption reduction. As for any embedded transportation system, these power converters are subject to severe constraints especially regarding compactness and vehicle integration. More specifically electric vehicles (EVs) require a high degree of availability (continuity of service). In particular the constraining automotive environment is characterized by severe traction-braking cycles which induce power and thermal cycling during running phases of the vehicle [1]- [2]. Indeed, thermo-mechanical stresses have a significant impact on the lifetime power switches [3]. Consequently, there is a degradation of the semiconductor devices, which finally forces them into a failed state: short-circuit (SC) or open-circuit (OC) [2]. Such failures occurring on single power switches can affect the function of power converters and spread through the traction chain elements. It is then necessary to first isolate the fault, confine it and lastly reconfigure the control algorithms to operate in the presence of the fault. Obviously, the topology of the power converters or the power chain must be adapted to allow operation in degraded mode:-by associating a fourth additional half bridge in a three-phase inverter topology connected to the neutral point of the electric motor [4].
IFSTTAR/COSYS/LTN-Laboratoire des Technologies Nouvelles 2 LGEP-Laboratoire de Génie Electrique de Paris-by using multilevel inverters topologies used in a high power traction drive [5].-by redistributing the control efforts in a four-wheel independently driven electric vehicles [6]… Furthermore, faults may also happen on sensors and can be taken into account by active fault-tolerant control systems. For example in [7]-[8], authors consider a high-performance induction-motor drive for an EV or a hybrid one (HEV). The proposed systems detect a sensor loss or a sensor recovery and dynamically change its strategies to sustain the best control performances.Besides, faults may also occur in the electrical machine and can be considered using fa...
“…Several papers have also been published on the topic of power modules accelerated ageing tests (thermal cycling and power cycling) in order to estimate the level of semiconductors expectancy lifetime [17]- [18] and to study the failure mechanisms and effects [18]- [20]- [21]. It has been reported that repetitive failures have two different sources: an external one which can be, for example, linked to faulty control signal [22] and an internal one, linked to physical degradation of the power semiconductor.…”
Section: Iipower Electronic Architecture Tolerant To Semiconductor Fmentioning
confidence: 99%
“…It has been reported that repetitive failures have two different sources: an external one which can be, for example, linked to faulty control signal [22] and an internal one, linked to physical degradation of the power semiconductor. Examples of these internal failures are: bond wire lift off, gate leakage failure and damages on semiconductors chip and solder [18], SiAl contact ageing [21], electro-migration effect [20], latch-up [23]. These internal failures can modify the operating state of the semiconductor and induce abnormal behavior like OC or SC states.…”
Section: Iipower Electronic Architecture Tolerant To Semiconductor Fmentioning
Abstract-This paper deals with a synthesis of Space Vector PWM control methods applied for a H-bridge inverter feeding a 3-phase Permanent Magnet Synchronous Machine in Electric Vehicle application. First, a short survey of existing power converter architectures, especially those adapted to degraded operating modes, is presented. Standard SVPWM control methods are compared with three innovative ones using EV-drive specifications in the normal operating mode. Then, a rigorous analysis of the margins left in the control strategy is presented for a semiconductor switch failure to fulfill degraded operating modes. Finally, both classic and innovative strategies are implemented in numerical simulation; their results are analyzed and discussed.
Index Terms-Motor drives, Inverters, Space vector pulse width modulation (SVPWM), Permanent magnet machines, Semiconductor device reliability
I.INTRODUCTIONPower converters are increasingly used in automotive applications for many reasons such as power conditioning, power management, and consumption reduction. As for any embedded transportation system, these power converters are subject to severe constraints especially regarding compactness and vehicle integration. More specifically electric vehicles (EVs) require a high degree of availability (continuity of service). In particular the constraining automotive environment is characterized by severe traction-braking cycles which induce power and thermal cycling during running phases of the vehicle [1]- [2]. Indeed, thermo-mechanical stresses have a significant impact on the lifetime power switches [3]. Consequently, there is a degradation of the semiconductor devices, which finally forces them into a failed state: short-circuit (SC) or open-circuit (OC) [2]. Such failures occurring on single power switches can affect the function of power converters and spread through the traction chain elements. It is then necessary to first isolate the fault, confine it and lastly reconfigure the control algorithms to operate in the presence of the fault. Obviously, the topology of the power converters or the power chain must be adapted to allow operation in degraded mode:-by associating a fourth additional half bridge in a three-phase inverter topology connected to the neutral point of the electric motor [4].
IFSTTAR/COSYS/LTN-Laboratoire des Technologies Nouvelles 2 LGEP-Laboratoire de Génie Electrique de Paris-by using multilevel inverters topologies used in a high power traction drive [5].-by redistributing the control efforts in a four-wheel independently driven electric vehicles [6]… Furthermore, faults may also happen on sensors and can be taken into account by active fault-tolerant control systems. For example in [7]-[8], authors consider a high-performance induction-motor drive for an EV or a hybrid one (HEV). The proposed systems detect a sensor loss or a sensor recovery and dynamically change its strategies to sustain the best control performances.Besides, faults may also occur in the electrical machine and can be considered using fa...
“…Multichip modules for high-power IGBT devices are complex multilayered structures consisting of different materials, which have to provide a good mechanical stability, good electrical insulation properties, and good thermal conduction capabilities [1].…”
Section: Introductionmentioning
confidence: 99%
“…Acceleration and deceleration cycles during a train commercial service, together with the IGBTs and diode switching, produce thermal cycling phenomena inside the module. These internal temperature variations associated to the mismatch of the thermal expansion coefficients (CTE) and the thickness differences between the layers in contact induce important shearing constrains at the layer interfaces [1]. For medium and high power component used in traction application, thermal cycling is the main failure cause [2].…”
Section: Introductionmentioning
confidence: 99%
“…The most common failure mechanisms are wire bonding lift off [3] and solder fatigue [4,5]. All these thermal cycling consequences and other failure mechanisms are presented in [1,2].…”
-This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) performances. These IGBT are essential components of the power converter in railway applications. Modelling methodology used in this study is design of experiments (DOE). The number of test in this kind of investigation is related with the number of factors. It is important before modelling to measure the effect of factors and interactions to suppress no significant factors and consequently, reduce the size of the DOE. In this paper we identify the significant elements among four factors related to converter design (L com , L ge ) and driver (ton, R goff ). Screening study on this factors show that only L com , R goff and to determine overvoltage and only R goff and t on determine commutation speed. Significant interactions are also identified. Lots of articles discuss about high power IGBT. This one gets onto IGBT behaviour with an experimental way.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.