Selectablity of mechanical and dielectric properties of Parylene-C columnar microfibrous thin films by varying deposition angle

Khawaji, Ibrahim H.; Chindam, Chandraprakash; Awadelkarim, Osama O.; Lakhtakia, Akhlesh

doi:10.1088/2058-8585/aa9f33

Cited by 7 publications

(6 citation statements)

References 43 publications

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“…ParyleneC is a polymer of the family poly( p -xylylene), however, with one hydrogen atom on each phenyl ring being substituted by chlorine. , It is an exceptionally thermally stable polymer that can resist temperatures of up to 200 °C in air and up to 500 °C in vacuum . Its physical characteristics made ParyleneC a suitable substrate for flexible electronics due to its flexibility and pronounced moisture barrier properties, while its low dielectric constant made it applicable as a gate dielectric in organic field-effect transistors, organic thin-film transistors, nonvolatile memories, and biomedical sensors . Still, ParyleneC acts as a passive substrate in all those cases, and widening its application range by introducing new properties is desired.…”

Section: Introductionmentioning

confidence: 99%

“…26,27 It is an exceptionally thermally stable polymer that can resist temperatures of up to 200 °C in air and up to 500 °C in vacuum. 28 Its physical characteristics made ParyleneC a suitable substrate for flexible electronics 26 due to its flexibility and pronounced moisture barrier properties, 29 while its low dielectric constant made it applicable as a gate dielectric in organic field-effect transistors, 30 organic thin-film transistors, 31 nonvolatile memories, 32 and biomedical sensors. 33 Still, ParyleneC acts as a passive substrate in all those cases, and widening its application range by introducing new properties is desired.…”

Section: ■ Introductionmentioning

confidence: 99%

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Introducing a Robust Flexible Conductive Hybrid: Indium Oxide-ParyleneC Obtained by Vapor Phase Infiltration

Yurkevich,

Modin,

Šarić Janković

et al. 2023

Chem. Mater.

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Hybrid materials are a merger of inorganic and organic materials and, as such, have the potential to outperform the characteristics and functionalities of conventional, that is, inorganic or organic materials. Consequently, various routes for their synthesis are being explored. However, despite the enormous recent progress in synthetic strategies, the pool of successfully hybridized materials is still very limited, thereby lowering their practical applicability since the functionality of the materials relies on the choice of the organic and inorganic constituents and their interplay. This work demonstrates the hybridization of indium oxide with ParyleneC upon vapor phase infiltration (VPI) of the metal-containing precursor trimethylindium into the polymer and its reaction with a counter precursor in its subsurface. We found that the choice of hydrogen peroxide instead of water vapor as the oxygen source substantially influences the hybrid material formation, resulting in a hybrid with an increased infiltration depth down to 300 nm, a narrower band gap, and stable sheet resistance values over a broad range of infiltration temperatures, from 135 to 210 °C. Electron microscopy and chemical analysis revealed the formation of indium oxide nanoparticles (NPs) within the ParyleneC with a capping layer of indium oxide. The flexible hybrid withstands at least 7000 bending events over a curvature with a radius of 5.5 mm. The redistribution of the NPs inside the polymer matrix upon bending even leads to a decrease of the electrical sheet resistance, which makes this flexible conductive hybrid (FCH) material opting for applications as robust flexible transparent electrodes.

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Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Introducing a Robust Flexible Conductive Hybrid: Indium Oxide-ParyleneC Obtained by Vapor Phase Infiltration

Yurkevich,

Modin,

Šarić Janković

et al. 2023

Chem. Mater.

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“…Parylene C is commonly used as a dielectric material for electronic applications [1,[3][4][5][6][7][8][9]. Pinholefree films of this polymer function well as protection layers [10] to minimize device degradation caused by exposure to air and moisture.…”

Section: Introductionmentioning

confidence: 99%

Charge Buildup and Leakage Current in Gold/Parylene-C/ Pentacene Capacitor under Constant-Voltage Stress

Khawaji

Brigeman

Awadelkarim

et al. 2020

Flex. Print. Electron.

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Degradation of metal-insulator-semiconductor (MIS) capacitors of gold/Parylene-C/Pentacene under constant voltage stress (CVS) was investigated to explore the electrical stability and reliability of Parylene C as a gate dielectric in flexible electronics. A stress voltage of fixed magnitude as high as 20 V, both negative and positive in polarity, was applied to each MIS capacitor at room temperature for a fixed duration as long as 10 s. The CVS effects on the capacitance-voltage curve-shift, the time-dependent leakage current and the time-dependent dielectric breakdown were measured and analyzed. CVS is observed to induce charge in Parylene-C and its interfaces with gold and Pentacene. The net induced charge is positive and negative for, respectively, negative and positive gate bias polarity during CVS. The magnitude of the charge accumulated following positive gate CVS is significantly higher than that following negative gate bias CVS in the range of 4 to 25 nC cm −2 . In contrast, the leakage current during the negative gate stress is three orders of magnitude higher than that during the positive gate stress for the same bias stress magnitude. The charge buildup and leakage current are due to the trapping of electrons and holes near the Parylene-C/Pentacene interface as well as in the Parylene-C layer.Before the application of the CVS, a dielectric breakdown occurs at an electric field of 1.62 MV cm −1 . After the application of the CVS, the breakdown voltage decreases and the density of the trapped charges increases as the stress voltage increases in magnitude, with the polarity of the trapped charges opposite to that of the stress voltage. The magnitude and direction of the capacitance-voltage curve-shift depend on the trapping and recombination of electrons and holes in the Parylene-C layer and in the proximity of the Parylene-C/Pentacene interface during CVS.

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“…Parylene C is commonly used as a dielectric material for electronic applications [1,3,4,5,6,7,8,9]. Pinhole-free films of this polymer function well as protection layers [10] to minimize device degradation caused by exposure to air and moisture.…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, this polymer has been used for flexible substrates due to its desirable mechanical properties (yield strength of 55.1 MPa and static Young's modulus of 2.76 GPa) and the ease of deposition in both micrometer-and nanometer-thickness regimes [11]. In addition, we have recently shown that Parylene-C columnar microfibrous thin films are viable candidates for use as interlayer dielectrics [3,4,5].…”

Section: Introductionmentioning

confidence: 99%

Gold/Parylene-C/Pentacene Capacitor under Constant-Voltage Stress

Khawaji¹,

Brigeman²,

Awadelkarim³

et al. 2019

Preprint

Self Cite

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Degradation of metal-insulator-semiconductor (MIS) capacitors of gold/Parylene-C/Pentacene under constant voltage stress (CVS) was investigated to explore the electrical stability and reliability of Parylene C as a gate dielectric in flexible electronics. A stress voltage of fixed magnitude as high as 20 V, both negative and positive in polarity, was applied to each MIS capacitor at room temperature for a fixed duration as long as 10 s. The CVS effects on the capacitance-voltage curve-shift, the time-dependent leakage current, and the time-dependent dielectric breakdown were measured and analyzed. CVS is observed to induce charge in Parylene-C and its interfaces with gold and Pentacene. The net induced charge is positive and negative for, respectively, negative and positive gate bias polarity during CVS. The magnitude of the charge accumulated following positive gate CVS is significantly higher than that following negative gate bias CVS in the range of 4 to 25 nC cm −2 . In contrast, the leakage current during the negative gate stress is three orders of magnitude higher than that during the positive gate stress for the same bias stress magnitude. The charge buildup and leakage current are due to the trapping of electrons and holes near the Parylene-C/Pentacene interface as well as in the Parylene-C layer. Before the application of the CVS, a dielectric breakdown occurs at an electric field of 1.62 MV cm −1 . After the application of the CVS, the breakdown voltage decreases and the density of the trapped charges increases as the stress voltage increases in magnitude, with the polarity of the trapped charges opposite to that of the stress voltage. The magnitude and direction of the capacitancevoltage curve-shift depend on the trapping and recombination of electrons and holes in the Parylene-C layer and in the proximity of the Parylene-C/Pentacene interface during CVS.

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Selectablity of mechanical and dielectric properties of Parylene-C columnar microfibrous thin films by varying deposition angle

Cited by 7 publications

References 43 publications

Introducing a Robust Flexible Conductive Hybrid: Indium Oxide-ParyleneC Obtained by Vapor Phase Infiltration

Introducing a Robust Flexible Conductive Hybrid: Indium Oxide-ParyleneC Obtained by Vapor Phase Infiltration

Charge Buildup and Leakage Current in Gold/Parylene-C/ Pentacene Capacitor under Constant-Voltage Stress

Gold/Parylene-C/Pentacene Capacitor under Constant-Voltage Stress

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