Segregation, precipitation and dislocation generation between seeds in directionally solidified mono-like silicon for photovoltaic applications

Tsoutsouva, M.G.; Oliveira, V.A.; Camel, D.; Thi, Thu Nhi Tran; Baruchel, J.; Marie, B.; Lafford, Tamzin

doi:10.1016/j.jcrysgro.2013.12.022

Cited by 47 publications

(31 citation statements)

References 27 publications

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“…Several previous studies (Lafford et al, 2013;Tsoutsouva et al, 2014Tsoutsouva et al, , 2015Tran Thi et al, 2015) have proved that RCI using synchrotron light is a powerful tool for performing this characterization. The principle of these techniques is presented schematically in Fig.…”

Section: Experimental Procedures 21 Transmission Rocking Curve Imagimentioning

confidence: 99%

Characterization of defects in mono-like silicon for photovoltaic applications using X-ray Bragg diffraction imaging

et al. 2015

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Rocking curve imaging (projection and section X-ray topography) has been used to study the generation and propagation of defects at the junctions between and above the seed crystals in mono-like silicon ingots. The images of different kinds of defects such as precipitates, dislocations and twins in the integrated intensity, full width at half-maximum and peak position maps resulting from the experiment have been studied. The qualitative and quantitative information that can be extracted from these maps, in particular the contrast of the images of the various defects, is discussed. These defects have a detrimental effect on solar cell efficiency and their detailed investigation allows clues to be obtained in order to improve the growth process. This work shows that synchrotron X-ray diffraction imaging techniques, because of their high angular resolution (<10 À4 ) and large field of view (several mm 2 ), constitute a powerful tool for investigating the initial stages of growth of directionally solidified mono-like silicon.

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Section: Experimental Procedures 21 Transmission Rocking Curve Imagimentioning

confidence: 99%

Characterization of defects in mono-like silicon for photovoltaic applications using X-ray Bragg diffraction imaging

et al. 2015

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“…The first 2D Model consists of heterogeneously distributed dislocations and no grain boundaries, representing mono-like [52][53][54][55][56][57][58][59] and epitaxial silicon [60][61][62][63]. The second 2D Model adds a grain boundary to the dislocations, simulating conventional multicrystalline silicon (mc-Si).…”

Section: B3smentioning

confidence: 99%

Building intuition of iron evolution during solar cell processing through analysis of different process models

et al. 2015

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An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during device fabrication. Over the last twenty years, these tools have accelerated process optimization, and several Process Simulators for iron, a ubiquitous and deleterious impurity in silicon, have been developed. The diversity of these tools can make it difficult to build intuition about the physics governing iron behavior during processing. Thus, in one unified software environment and using self-consistent terminology, we combine and describe three of these Simulators. We vary structural defect distribution and iron precipitation equations to create eight distinct Models, which we then use to simulate different stages of processing. We find that the structural defect distribution influences the final interstitial iron concentration ([Fe,]) more strongly than the iron precipitation equations. We identify two regimes of iron behavior: (1) diffusivity-limited, in which iron evolution is kinetic ally limited and bulk [Fe,] predictions can vary by an order of magnitude or more, and (2) solubility-limited, in which iron evolution is near thermodynamic equilibrium and the Models yield similar results. This rigorous analysis provides new intuition that can inform Process Simulation, material, and process development, and it enables scientists and engineers to choose an appropriate level of Model complexity based on wafer type and quality, processing conditions, and available computation time.

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“…A G2 boron-doped mono-like silicon ingot was grown by the directional solidification technique on a pavement of 3 Â 3 (0 0 1) oriented Cz silicon seeds with {1 1 0} vertical side surfaces as described in more detail elsewhere [26].…”

Section: Methodsmentioning

confidence: 99%

Mono-like silicon ingots grown on low angle misoriented seeds: Defect characterization by synchrotron X-ray diffraction imaging

et al. 2015

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Segregation, precipitation and dislocation generation between seeds in directionally solidified mono-like silicon for photovoltaic applications

Cited by 47 publications

References 27 publications

Characterization of defects in mono-like silicon for photovoltaic applications using X-ray Bragg diffraction imaging

Characterization of defects in mono-like silicon for photovoltaic applications using X-ray Bragg diffraction imaging

Building intuition of iron evolution during solar cell processing through analysis of different process models

Mono-like silicon ingots grown on low angle misoriented seeds: Defect characterization by synchrotron X-ray diffraction imaging

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