Seeded growth of AlN single crystals by physical vapor transport

Zhuang, D.; Herro, Ziad; Schlesser, R.; Sitar, Zlatko

doi:10.1016/j.jcrysgro.2005.11.047

Cited by 75 publications

(46 citation statements)

References 15 publications

(19 reference statements)

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“…Further details of the AlN bulk crystal growth process have been published elsewhere. [16][17][18] After growth, thin film and bulk crystal samples were removed from the reactors and exposed to ambient air for a period of up to several weeks. For determination of the native oxide composition and subsequent annealing experiments, air-exposed samples were loaded asgrown into the UHV system.…”

Section: Methodsmentioning

confidence: 99%

“…The peak areas calculated from the fit curves were converted into elemental compositions using atomic sensitivity factors for x-ray sources at 90°. 17 Samples were heated in a separate UHV cleaning chamber (base pressure 1 · 10 )9 Torr) and transferred in vacuo to the surface analysis chamber after heating to temperatures of 260°C, 770°C, and 830°C for a minimum of 6 h in order to study the thermal evolution of surface chemistry. The annealing temperature was measured by a thermocouple on the back side of the molybdenum sample holder.…”

Section: Methodsmentioning

confidence: 99%

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X-Ray Photoelectron Spectroscopy Characterization of Aluminum Nitride Surface Oxides: Thermal and Hydrothermal Evolution

Dalmau

Collazo

Mita

et al. 2007

Journal of Elec Materi

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Oxidized surfaces of aluminum nitride (AlN) epilayers grown on sapphire substrates and of AlN bulk crystals grown by physical vapor transport were studied by x-ray photoelectron spectroscopy (XPS). Analysis of the oxygen core level spectra showed approximately equal contributions from oxygen in two bonding states, which were identified by the binding energies and relative separation of the fitted peaks as OH ) and O 2) . The oxide on air-exposed AlN surfaces was identified as aluminum oxide hydroxide. Systematic annealing experiments were conducted in vacuum to study the thermal evolution of hydroxide layers, and a dehydration mechanism resulting in the formation of Al 2 O 3 at high temperature was identified.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

X-Ray Photoelectron Spectroscopy Characterization of Aluminum Nitride Surface Oxides: Thermal and Hydrothermal Evolution

Dalmau

Collazo

Mita

et al. 2007

Journal of Elec Materi

Self Cite

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“…Sublimation growth of AlN, first developed by Slack early as in 1976, has been essentially advanced and now can provide high crystal growth rates (up to 500-1000 mm/h [2]) and high crystal quality (dislocation density is lower than 1000 cm À2 and the FWHM of the rocking curve is less than 10 arcsec in the best samples [3]). Currently, rather stable growth of 15-25-mm-diameter and 10-20-mm-long AlN single crystals has been achieved [3][4][5] and test samples of UV LEDs and HEMTs with III-nitride heterostructures grown on the AlN substrates are exhibited [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Experimental and theoretical analysis of sublimation growth of AlN bulk crystals

Makarov

Avdeev²,

Barash³

et al. 2008

Journal of Crystal Growth

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“…Owing to the progress made in the last years, physical vapour transport (PVT) is the most popular technique to grow AlN single crystals [3]. Crystal IS Inc. has already initiated the production of AlN single crystals (up to 1 in in diameter) with a dislocation density as low as 10 3 cm À2 and also demonstrated the feasibility of 2 00 single crystals.…”

Section: Introductionmentioning

confidence: 99%