Seed layer synthesis effect on the concentration of interface defects and emission spectra of ZnO nanorods/p‐GaN light‐emitting diode

Alnoor, Hatim; Pozina, Galia; Willander, Magnus; Nur, Omer

doi:10.1002/pssa.201600333

Cited by 7 publications

(11 citation statements)

References 24 publications

(63 reference statements)

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“…Below are a description and discussion of these results that were published in the six appended papers. [34,52,[56][57][58][59] …”

Section: Resultsmentioning

confidence: 99%

“…[56][57][58] Moreover, high crystal quality well-oriented Co-doped ZnO NRs were also synthesized by manipulating the way of mixing the synthesizer solution. [34,52,59] All these parameters were precisely selected considering that the final properties of the ZnO NRs are susceptible to the synthesis conditions.…”

Section: Hydrothermal Synthesis Methodsmentioning

confidence: 99%

“…[35,53] In this thesis, two types of seed layers were prepared, and their effect on the performance of the synthesized ZnO-based heterojunction LEDs was systematically studied. [57,58] [58] For the synthesis of the pure and Co-doped ZnO NRs, the prepared seed layer solutions were then spun coated 3-4 times on the substrates with a spin speed of 3000 round per minute (rpm) for 3 minutes. This step was then followed by annealing in a normal laboratory oven for 10 minutes at 120 ºC and subsequently submerged in the ZnO synthesis solution.…”

Section: Zno Seed Layer Preparationmentioning

confidence: 99%

“…The synthesis solutions used were 0.05 M concentration for the zinc nitrate and 0.075 M concentration for the HMTA with a molar ratio of 1:2. [56][57][58] Then we investigated the effect of stirring durations of the synthesis solutions on the optical properties of the ZnO NRs. [56] Four synthesis precursor's (solution) consisting of zinc nitrate and HMTA were dissolved separately in 100 ml DI-water each and were then carefully mixed and stirred at room-temperature for 1, 3, 5 and 15 h, respectively, with a stirring speed of 600 rpm.…”

Section: Synthesis Of Zno Nrsmentioning

confidence: 99%

“…[57,58] The p-type and n-type contacts were evaporated in a circular area of diameter ~ 2 mm. The fabrication process is illustrated in Figure 3.4.…”

Section: N-zno Nrs/p-gan-based Heterojunction Ledsmentioning

confidence: 99%

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Toward the Optimization of Low-temperature Solution-based Synthesis of ZnO Nanostructures for Device Applications

Alnoor¹

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One-dimensional (1D) nanostructures (NSs) of Zinc Oxide (ZnO) such as nanorods (NRs) have recently attracted considerable research attention due to their potential for the development of optoelectronic devices such as ultraviolet (UV) photodetectors and light-emitting diodes (LEDs). The potential of ZnO NRs in all these applications, however, would require synthesis of high crystal quality ZnO NRs with precise control over the optical and electronic properties. It is known that the optical and electronic properties of ZnO NRs are mostly influenced by the presence of native (intrinsic) and impurities (extrinsic) defects. Therefore, understanding the nature of these intrinsic and extrinsic defects and their spatial distribution is critical for optimizing the optical and electronic properties of ZnO NRs. However, identifying the origin of such defects is a complicated matter, especially for NSs, where the information on anisotropy is usually lost due to the lack of coherent orientation. Thus, the aim of this thesis is towards the optimization of the lowtemperature solution-based synthesis of ZnO NRs for device applications. In this connection, we first started with investigating the effect of the precursor solution stirring durations on the deep level defects concentration and their spatial distribution along the ZnO NRs. Then, by choosing the optimal stirring time, we studied the influence of ZnO seeding layer precursor’s types, and its molar ratios on the density of interface defects. The findings of these investigations were used to demonstrate ZnO NRs-based heterojunction LEDs. The ability to tune the point defects along the NRs enabled us further to incorporate cobalt (Co) ions into the ZnO NRs crystal lattice, where these ions could occupy the vacancies or interstitial defects through substitutional or interstitial doping. Following this, high crystal quality vertically welloriented ZnO NRs have been demonstrated by incorporating a small amount of Co into the ZnO crystal lattice. Finally, the influence of Co ions incorporation on the reduction of core-defects (CDs) in ZnO NRs was systematically examined using electron paramagnetic resonance (EPR)

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“…Below are a description and discussion of these results that were published in the six appended papers. [34,52,[56][57][58][59] …”

Section: Resultsmentioning

confidence: 99%

Section: Hydrothermal Synthesis Methodsmentioning

confidence: 99%

Section: Zno Seed Layer Preparationmentioning

confidence: 99%

Section: Synthesis Of Zno Nrsmentioning

confidence: 99%

“…[57,58] The p-type and n-type contacts were evaporated in a circular area of diameter ~ 2 mm. The fabrication process is illustrated in Figure 3.4.…”

Section: N-zno Nrs/p-gan-based Heterojunction Ledsmentioning

confidence: 99%

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