Seebeck difference - temperature sensors integrated into smart power technologies

Dibra, Donald; Stecher, M.; Lindemann, Andreas; Lutz, Josef; Kadow, C.

doi:10.1109/ispsd.2009.5158040

Cited by 4 publications

(1 citation statement)

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“…When there is a temperature difference between the two ends, according to the Seebeck Effect, the thermocouple converts the temperature difference proportional to the voltage difference. Several series-connected thermocouples make up the thermopile, to superpose thermovoltage of each thermocouple [5][6]. The Seebeck voltage can be obtained as:…”

Section: Principle and Modelingmentioning

confidence: 99%

Design of an Embedded Broadband Thermoelectric Power Sensor in the InP DHBT Process

Heinrich

Krozer

2020

7th International Electronic Conference on Sensors and Applications

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The thermopile-based thermoelectric sensor has emerged as an important approach for microwave power measurement. It employs the Seebeck effect, which converts the microwave power into the heat and generates the thermovoltage. However, the output thermovoltage generally exhibits a frequency-dependent feature, which affects measurement accuracy. Besides, the low sensitivity of the current existed planar thermopile-based sensor constrains its further application. This is mainly caused by the heat loss of the substrate in the conversion process of microwave power-heat-electricity. In this paper, a novel embedded power sensor based on the indium phosphide (InP) double heterojunction bipolar transistor (DHBT) process is presented. The thermopile is embedded in the benzocyclobutene (BCB) to prevent the heat loss, and the embedded structure also enables this sensor to eliminate the need for microelectromechanical system (MEMS) technology. The electromagnetic simulation by ANSYS high frequency structure simulator (HFSS) and thermal simulation by ANSYS Steady-State Thermal are combined to evaluate the sensor performance. The result shows that the output voltage increases with the input power linearly, and the proposed sensor is almost independent of the microwave frequency. A sensitivity of l.07 mV/mW has been achieved up to 200 GHz, with the port return loss lower than −15.8 dB.

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Section: Principle and Modelingmentioning

confidence: 99%