2011
DOI: 10.1143/jjap.50.106002
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Secondary Ionization Coefficient of MgO and Accumulated Charge

Abstract: The (111)-oriented chemical-vapor-deposited diamond homoepitaxial layers with low defect density exhibited well-resolved free-exciton transitions in cathodoluminescence at 13 K and a sharp peak at 1332 cm À1 (linewidth: 1.9 cm À1 ) in Raman scattering. Furthermore, using these (111) layers, we fabricated metal-semiconductor field-effect transistors (FETs). FETs with an 11-mm-long gate exhibited a maximum drain current of 24 mA/mm and maximum transconductance of 14 mS/mm. These values are of the same order as t… Show more

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Cited by 4 publications
(4 citation statements)
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“…A background gas pressure ( p 0 ) of 1–100 Torr is considered assuming a constant temperature of 0 °C. Thus the considered pd values ( p 0 d ) range from 0.2 to 20 Torr·cm, which coincides roughly with a common pd range in experimental studies [4–7].…”
Section: Numerical Modelsupporting
confidence: 82%
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“…A background gas pressure ( p 0 ) of 1–100 Torr is considered assuming a constant temperature of 0 °C. Thus the considered pd values ( p 0 d ) range from 0.2 to 20 Torr·cm, which coincides roughly with a common pd range in experimental studies [4–7].…”
Section: Numerical Modelsupporting
confidence: 82%
“…In many experiments, γ ′ often decreases with E/p 0 [4–6,22]. This tendency corresponds to the characteristics in case (i) and suggests that the effects of the nonionic processes are actually significant.…”
Section: Resultsmentioning
confidence: 68%
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