Second-Order Nonlinearities and Optical Rectification

Khurgin, Jacob B.

doi:10.1016/s0080-8784(08)62730-1

Cited by 12 publications

(3 citation statements)

References 131 publications

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“…Asymmetric stepped quantum wells (QWs) have been widely used in QW infrared (IR) photodetectors (QWIP) [1], nonlinear optics [2] and in the design of terahertz (1-10 THz or far-IR (FIR) as used in some of the references) lasers [3][4][5][6][7][8]. In the optically pumped terahertz lasers, asymmetric stepped QWs are used to form energy levels (or sub-bands), so that the lasers can operate on a three-level scheme analogous to terahertz gas lasers.…”

Section: Introductionmentioning

confidence: 99%

Design optimization of optically pumped terahertz lasers in stepped quantum wells

Rutt¹,

Xin²,

Tan³

2002

J. Phys. D: Appl. Phys.

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Asymmetric stepped quantum wells (QWs) have been used in many optoelectronic devices. This paper proposes a modulation doping position at the edge of the stepped well to minimize the potential distortion caused by the doping. As a result, parasitic potential wells are eliminated, and the sensitivity of the energy levels to dopant concentrations is substantially reduced. We also suggest a stacked design to juxtapose two QW slabs in order to improve the waveguide mode overlap in optically pumped terahertz lasers using the structure. The percentage of overlap between the active QWs layers and the laser mode increases from 9.8% for a thinned substrate single slab scheme to 68.4% for the stacked double slabs, respectively, with two highly doped layers acting as plasma waveguide. A diffraction integral model is established to simulate the laser cavity tolerance to possible misalignment in the stacked design. Our modelling result shows that the diffraction loss due to small (few micrometre) misalignment or difference in slab length is negligible compared to other losses in the laser system.

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Section: Introductionmentioning

confidence: 99%

Design optimization of optically pumped terahertz lasers in stepped quantum wells

Rutt¹,

Xin²,

Tan³

2002

J. Phys. D: Appl. Phys.

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“…where x nn is a matrix element of x connecting two zone-centre Bloch functions (see equation (2.10) below). This procedure has been used by many authors, both for the construction of effective-mass Hamiltonians (Aspnes 1975, Lommer et al 1985, Zhu and Chang 1994, Khurgin 1994, Krebs and Voisin 1996, Khurgin and Voisin 1997 and for the calculation of interband optical transition rates (Khurgin (1988); Wang (1989), p 603; Weisbuch and Vinter (1991), p 58; Singh (1993), p 154; Haug and Koch (1994), p 71; Chuang (1995), p 355; Szmulowicz (1995); Fiore et al (1995); Rosencher et al (1996); Khurgin (1999)). The difficulty with this procedure is that the matrix element x nn is ill defined (Burt 1993).…”

Section: Introductionmentioning

confidence: 99%

Theory of the effective Hamiltonian for degenerate bands in an electric field

Foreman¹

2000

J. Phys.: Condens. Matter

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Abstract.Recent experiments have generated a renewed interest in the properties of the degenerate valence states in semiconductors under the influence of a uniform external electric field. In response, a number of authors have proposed that the standard Luttinger-Kohn effectivemass Hamiltonian should be modified to include the energy of interaction between the electric field and the dipole matrix elements of the relevant zone-centre Bloch functions. This article examines these proposals by comparing the proposed dipole interaction with rigorous derivations of the fielddependent Hamiltonian in the Bloch and Luttinger-Kohn representations. It is shown that the dipole matrix element of a unit cell is not a suitable foundation for a Hamiltonian because it depends on the choice of unit cell, which is arbitrary. Moreover, the correct Luttinger-Kohn Hamiltonian has no wave-vector-independent matrix elements that are linear in the applied field E, except for small terms of relativistic origin. Therefore, the proposed modifications to the Luttinger-Kohn theory are not valid. The correct form of the Luttinger-Kohn Hamiltonian is derived here through terms of order k 3 , kE, and E 2 , along with the momentum matrix to first order in k and E. In addition, the recent discovery of field-induced mixing at the Brillouin zone boundary in the Luttinger-Kohn representation is studied in detail.

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“…GaAs is a well-known nonlinear material; it has a large nonlinear coefficient pm/V at 1.548 m [3]. Optical rectification can be obtained even if the material has not been phase matched.…”

Section: Optical Rectificationmentioning

confidence: 99%

Generation of ultrashort electrical pulses in semiconductor waveguides

Loyo-Maldonado

Lee

Stanley

et al. 2003

IEEE Photon. Technol. Lett.

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Abstract-In this letter, we report a novel device capable of generating ultrashort electrical pulses on a coplanar waveguide (CPW) by means of optical rectification. The device consists of a completely passive GaAs-based optical waveguide, which is velocity matched to a CPW line. Optical pulses are injected into the device and electrical pulses are collected at the output. Experimental results obtained in the laboratory show the potential of this device for high speed optical-to-electrical conversion.

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Second-Order Nonlinearities and Optical Rectification

Cited by 12 publications

References 131 publications

Design optimization of optically pumped terahertz lasers in stepped quantum wells

Design optimization of optically pumped terahertz lasers in stepped quantum wells

Theory of the effective Hamiltonian for degenerate bands in an electric field

Generation of ultrashort electrical pulses in semiconductor waveguides

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