Systematic optimization of quantum junction colloidal quantum dot solar cells Appl. Phys. Lett. 101, 151112 (2012) Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes Appl. Phys. Lett. 101, 121919 (2012) Performance and polarization effects in (112) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers Appl. Phys. Lett. 101, 121106 (2012) Optical absorptions in AlxGa1−xAs/GaAs quantum well for solar energy application J. Appl. Phys. 112, 054314 (2012) Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure Intersubband absorption energy shifts in 3-level system stemming from depolarization and excitonlike effects are investigated. Analytically, the expressions we derive present good explanations to the conventional 2-level results and bare potential transition energy results; and numerical results show that they are more exact than the previous studies to describe the 3-level system depolarization and excitonlike shift ͑DES͒ character especially for higher carrier density ͑more than 8 ϫ 10 11 cm −2 ͒. One interesting detail we find is that the "large blue" DES becomes "slight redshift" in the low doping limit ͑less than 1.9ϫ 10 11 cm −2 ͒, which may be neglected by the previous studies of intersubband transitions. Temperature character of DES in the step well structure is also numerically studied. Finally the above are applied to calculate asymmetric step quantum well structures. The two main functional aspects of terahertz ͑THz͒ emitters are discussed and several basic optimizing conditions are considered. By adjusting the well geometry parameters and material composition systematically, some optimized structures which satisfy all of the six conditions are recommended in tables. These optimizations may provide useful references to the design of 3-level-based optically pumping THz emitters.