Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”

Pintilie, I.; Fretwurst, E.; Lindström, G.; Ståhl, Jan-Eric

doi:10.1063/1.1564869

Cited by 56 publications

(45 citation statements)

References 16 publications

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“…2a. The quadratic dose dependence (2 nd order generation) of the I p -center was previously found both for the STFZ and DOFZ diodes up to irradiation doses of 2.80 MGy [48,50,51] and is displayed in vacancies and interstitials are mobile) it was suggested that the best candidate is the long searched for defect complex V 2 O. The V 2 O is the only one defect generated by a second order process that was evidenced by Electron Paramagnetic Resonance [53,54] as direct result of irradiation.…”

Section: Deep Acceptor I Pmentioning

confidence: 93%

“…The I p -center is a point defect formed via a second order process that is responsible for the observed type inversion effect in oxygen lean material after γ-irradiation [48,50,51]. It was detected so far in three charge states (-, 0 and +), with two levels in the band-gap, a donor level in the lower part (E V + 0.23 eV) and an acceptor level at the middle of the gap (E C -0.55 eV).…”

Section: Deep Acceptor I Pmentioning

confidence: 99%

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Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Pintilie

Lindstroem

Junkes

et al. 2009

Nuclear Instruments and Methods in Physics Research Section A:

125

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This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60 Co-γ rays, 6 and 15 MeV electrons, 23 GeV protons and reactor neutrons revealed the existence of point defects and cluster related centers having a strong impact on damage properties of Si diodes. The detailed relation between the "microscopic" reasons as based on defect analysis and their "macroscopic" consequences for detector performance are presented. In particular, it is shown that the changes in the Si device properties after exposure to high levels of 60 Co-γ doses can be completely understood by the formation of two point defects, both depending strongly on the oxygen concentration in the silicon bulk. Specific for hadron irradiation are the annealing effects which decrease respectively increase the originally observed damage effects as seen by the changes of the depletion voltage. A group of three cluster related defects, revealed as deep hole traps, proved to be responsible specifically for the reverse annealing. Their formation is not affected by the oxygen content or silicon growth procedure suggesting that they are complexes of multi-vacancies located inside extended disordered regions.

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Section: Deep Acceptor I Pmentioning

confidence: 93%

Section: Deep Acceptor I Pmentioning

confidence: 99%

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Pintilie

Lindstroem

Junkes

et al. 2009

Nuclear Instruments and Methods in Physics Research Section A:

125

View full text Add to dashboard Cite

show abstract

“…Measurements with methods like Thermally Stimulated Current technique (TSC), Deep Level Transient Spectroscopy (DLTS), Transient Current Technique (TCT), Capacitance-Voltage (C-V) and Current-Voltage (I-V) have revealed a multitude of defects (11 different energy levels listed in [13]) after irradiations with hadrons or higher energy leptons. The microscopic defects have been observed to influence the macroscopic properties of a silicon sensor by charged defects contributing to the effective doping concentration [14,15,16,17,18,19] and deeper levels also to trapping and generation/recombination of the charge carriers (leakage current) [19,20,21,22]. Such quantity of defect levels set up a vast parameter space that is neither practical nor purposeful to model and tune.…”

Section: Radiation Induced Defectsmentioning

confidence: 99%

Simulation of radiation-induced defects

Peltola¹

2015

Proceedings of 24th International Workshop on Vertex Detectors — PoS(VERTEX2015)

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Mainly due to their outstanding performance the position sensitive silicon detectors are widely used in the tracking systems of High Energy Physics experiments such as the ALICE, ATLAS, CMS and LHCb at LHC, the world's largest particle physics accelerator at CERN, Geneva. The foreseen upgrade of the LHC to its high luminosity (HL) phase (HL-LHC scheduled for 2023), will enable the use of maximal physics potential of the facility. After 10 years of operation the expected fluence will expose the tracking systems at HL-LHC to a radiation environment that is beyond the capacity of the present system design. Thus, for the required upgrade of the all-silicon central trackers extensive measurements and simulation studies for silicon sensors of different designs and materials with sufficient radiation tolerance have been initiated within the RD50 Collaboration. Supplementing measurements, simulations are in vital role for e.g. device structure optimization or predicting the electric fields and trapping in the silicon sensors. The main objective of the device simulations in the RD50 Collaboration is to develop an approach to model and predict the performance of the irradiated silicon detectors using professional software. The first successfully developed quantitative models for radiation damage, based on two effective midgap levels, are able to reproduce the experimentally observed detector characteristics like leakage current, full depletion voltage and charge collection efficiency (CCE). Recent implementations of additional traps at the SiO 2 /Si interface or close to it have expanded the scope of the experimentally agreeing simulations to such surface properties as the interstrip resistance and capacitance, and the position dependency of CCE for strip sensors irradiated up to ∼1.5 × 10 15 n eq cm −2 . Insights to the development processes of the defect models as well as a review of the recent results from TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented.

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“…I and Γ are generated in higher concentrations in standard FZ silicon than in oxygen enriched silicon, while the BD is found in oxygen enriched and epitaxial silicon (see Fig. 1) ( [2][3][4]). The Γ defect has an acceptor level at E v + 0.68 eV, linear dose dependence and can explain about 10% of the damage.…”

Section: Defect Characterisationmentioning

confidence: 99%

Development of Semiconductor Detectors for Very Harsh Radiation Environments in High Energy Physics Applications

Casse¹

2004

Innovative Detectors for Supercolliders

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Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”

Cited by 56 publications

References 16 publications

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Simulation of radiation-induced defects

Development of Semiconductor Detectors for Very Harsh Radiation Environments in High Energy Physics Applications

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