Second harmonic pico-second pulse generation with mode-locked 1064nm DBR laser diodes

Klehr, A.; Prziwarka, Thomas; Jedrzejczyk, Daniel; Brox, O.; Bugge, F.; Wenzel, H.; Paschke, K.; Erbert, G.; Tränkle, G.

doi:10.1117/12.2036321

Cited by 6 publications

(3 citation statements)

References 8 publications

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“…Multi-section waveguide structure is generally adopted in a semiconductor mode-locked laser 9 – 12 , where the gain section is forward biased and saturable absorber (SA) section is reversely biased. The gain properties of single-section different material quantum well (QW)/quantum dot (QD) lasers also have been intensively studied.…”

Section: Introductionmentioning

confidence: 99%

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Qiao

Sia

et al. 2022

Sci Rep

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Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, consisting of the layers of p-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ~ 1.06 μm, with a fundamental repetition rate at ~ 19.56 GHz have been demonstrated. Modal gain characteristics, such as a gain bandwidth and a gain peak wavelength of the MLL, as a function of the saturable absorber (SA) bias voltage (Va) as well as the injection current of gain section (Ig), were investigated by the Hakki-Paoli method. With the increase of Va, the lasing wavelength and net modal gain peak of the MLL both exhibited red-shifts to longer wavelength significantly, while the modal gain bandwidth was narrowed. Both the net modal gain bandwidth and gain peak of the MLL followed a polynomial distribution versus the reverse bias at the absorber section. In addition, for the first time, it was found that Va had an obvious effect on the modal gain characteristics of the MLL.

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Section: Introductionmentioning

confidence: 99%

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Qiao

Sia

et al. 2022

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Multi-section waveguide structure is generally adopted in a semiconductor mode-locked laser [9][10][11][12], where the gain section is forward biased and saturable absorber (SA) section is reversely biased. The gain properties of single-section InGaAs/GaAs QW/QD lasers also have been intensively studied [9][10][11][12][13][14]. DQW MLLs have higher output power and Electro-optic conversion e ciency than QD MLLs, and multisection DQW MLLs also can generate shorter pulse [15].…”

Section: Introductionmentioning

confidence: 99%

Modal Gain Characteristics of A Two-section InGaAs/GaAs Double Quantum Well Passively Mode-locked Laser with Asymmetric Waveguide

Qiao¹,

Li²,

Sia³

et al. 2021

Preprint

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Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, concluding the layers of P-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ∼1.06µm, with a fundamental repetition rate at ∼19.56GHz have been demonstrated. Modal gain characteristics, such as a gain bandwidth and a gain peak wavelength of the MLL, as a function of the saturable absorber (SA) bias voltage (Va) as well as the injection current of gain section (Ig), were investigated by the Hakki-Paoli method. With the increase of Va, the lasing wavelength and net modal gain peak of the MLL both exhibited red-shifts to longer wavelength significantly, while the modal gain bandwidth was compressed. Both the net modal gain bandwidth and gain peak of the MLL followed a polynomial distribution versus the reverse bias at the absorber section. In addition, for the first time, it was found that Va had an obvious effect on the differential gain of the MLL.

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“…In contrast, mode-locked semiconductor lasers, taking advantage of compactness, low cost, and high frequency tuning flexibility have garnered considerable interest of late. Up to now, semiconductor quantum well (QW)/quantum dot (QD) MLLs, with multi-section, twosection, and single-section configurations, have been extensively reported at several wavelengths [13]- [16]. However, MLL emitting at 1.06 µm and temperature-related characteristics of such devices are rarely studied.…”

Section: Introductionmentioning

confidence: 99%

Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

Qiao

Sia

et al. 2021

IEEE Access

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A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06 µm is demonstrated. Stable mode locking operation is achieved up to 80 • C. The fundamental repetition rate is at ∼9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at ∼38.04 GHz is observed. The characteristic temperature (T 0 ) of the laser and the influences of absorber bias voltage on T 0 have been systematically investigated. From our findings, T 0 shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation.INDEX TERMS Semiconductor lasers, quantum well lasers, quantum wells, laser modes.

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Second harmonic pico-second pulse generation with mode-locked 1064nm DBR laser diodes

Cited by 6 publications

References 8 publications

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Modal Gain Characteristics of A Two-section InGaAs/GaAs Double Quantum Well Passively Mode-locked Laser with Asymmetric Waveguide

Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

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