Second harmonic generation spectroscopy of chemically modified Si(111) surfaces

Mitchell, S. A.; Mehendale, M.; Villeneuve, D. M.; Boukherroub, Rabah

doi:10.1016/s0039-6028(01)01161-x

Cited by 25 publications

(36 citation statements)

References 35 publications

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“…For full details on these experiments, see Refs. [16,21,23,24]. This analysis provides information on the physics behind the SSHG yield and how it is affected by a variety of factors.…”

Section: Resultsmentioning

confidence: 99%

“…However, the Si(111)(1×1):H surface offers some respite in this area. This surface can be prepared to a high degree of structural quality and has been experimentally characterized with SHG to a great degree of accuracy [16,21]. The added H saturates the surface Si dangling bonds and eliminates any surface-related electronic states in the band gap.…”

Section: * Bms@ciomxmentioning

confidence: 99%

“…[16,21,23,24], with two-photon energies ranging from 2.5 to 5 eV covering both the E 1 and E 2 critical point transitions for bulk Si. These SHG experiments were carried out with different polarizations of incoming and outgoing beams which are taken into account in the theoretical analysis.…”

Section: * Bms@ciomxmentioning

confidence: 99%

“…4, we compare the theoretical R pS with experimental data from Ref. [21]; these data, however, only encompass the E 1 peaks and were obtained at room temperature. We consider an angle of incidence θ = 45 • and an azimuthal angle φ = 30 • to match these experimental conditions.…”

Section: B Calculated R Ps Compared To Experimentsmentioning

confidence: 99%

“…The measurements presented in Ref. [21] were taken very shortly after the surface had been prepared, and the surface itself was prepared with a high degree of quality and measured at room temperature. Peak position compared to theory is slightly improved under these conditions.…”

Section: B Calculated R Ps Compared To Experimentsmentioning

confidence: 99%

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Improvedab initiocalculation of surface second-harmonic generation from Si(111)(1×1):H

et al. 2016

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We carry out an improved ab initio calculation of surface second-harmonic generation (SSHG) from the Si(111)(1×1):H surface. This calculation includes three new features in one formulation: (i) the scissors correction, (ii) the contribution of the nonlocal part of the pseudopotentials, and (iii) the inclusion of a cut function to extract the surface response, all within the independent particle approximation. We apply these improvements on the Si(111)(1×1):H surface and compare with various experimental spectra from several different sources. We also revisit the three-layer model for the SSHG yield and demonstrate that it provides more accurate results over several, more common, two-layer models. We demonstrate the importance of using properly relaxed coordinates for the theoretical calculations. We conclude that this approach to the calculation of the second-harmonic spectra is versatile and accurate within this level of approximation. This well-characterized surface offers an excellent platform for comparison with theory and allows us to offer this study as an efficient benchmark for this type of calculation.

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“…For full details on these experiments, see Refs. [16,21,23,24]. This analysis provides information on the physics behind the SSHG yield and how it is affected by a variety of factors.…”

Section: Resultsmentioning

confidence: 99%

Section: * Bms@ciomxmentioning

confidence: 99%

Section: * Bms@ciomxmentioning

confidence: 99%

Section: B Calculated R Ps Compared To Experimentsmentioning

confidence: 99%

Section: B Calculated R Ps Compared To Experimentsmentioning

confidence: 99%

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Improvedab initiocalculation of surface second-harmonic generation from Si(111)(1×1):H

et al. 2016

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Polarizable-Bond Model for Surface Second-Harmonic Generation at Si(111):H (1 � 1)

Mejía

Mendoza

2001

phys. stat. sol. (a)

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Subject classification: 78.68.+m; S5.11 The polarizable bond model (PBM) is used to study second harmonic generation (SHG) from a Si(111) : H ð1 Â 1Þ surface. The PBM is driven by the local-field interaction among the polarizable entities that make up the system. We show that the Si-H bond can be used to obtain a theoretical SHG spectrum in qualitative agreement with experimental data, for the resonant E 1 bulk critical point of Si, and that SHG can be strongly modified by changing the position of the centroid of the Si back bonds in this surface.

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Second‐Order Optical Nonlinearity in Silicon Waveguides: Inhomogeneous Stress and Interfaces

Schriever

Bianco

Cazzanelli

et al. 2014

Advanced Optical Materials

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We report the observation of second-harmonic generation (SHG) in stoichiometric silicon nitride waveguides grown via low-pressure chemical vapor deposition (LPCVD). Quasi-rectangular waveguides with a large cross section were used, with a height of 1 µm and various different widths, from 0.6 to 1.2 µm, and with various lengths from 22 to 74 mm. Using a mode-locked laser delivering 6-ps pulses at 1064 nm wavelength with a repetition rate of 20 MHz, 15% of the incoming power was coupled through the waveguide, making maximum average powers of up to 15 mW available in the waveguide depending on the waveguide cross section. Second-harmonic output was observed with a delay of minutes to several hours after the initial turn-on of pump radiation, showing a fast growth rate between 10 −4 to 10 −2 s −1 , with the shortest delay and highest growth rate at the highest input power. After this first, initial build-up (observed delay and growth), the second-harmonic became generated instantly with each new turn-on of the pump laser power. Phase matching was found to be present independent of the used waveguide width, although the latter changes the fundamental and second-harmonic phase velocities. We address the presence of a second-order nonlinearity and phase matching, involving an initial, power-dependent build-up, to the coherent photogal-vanic effect. The effect, via the third-order nonlinearity and multiphoton absorption leads to a spatially patterned charge separation, which generates a spatially periodic, semi-permanent, DC-field-induced second-order susceptibility with a period that is appropriate for quasi-phase matching. The maximum measured second-harmonic conversion efficiency amounts to 0.4% in a waveguide with 0.9 × 1 µm 2 cross section and 36 mm length, corresponding to 53 µW at 532 nm with 13 mW of IR input coupled into the waveguide. The according χ (2)-susceptibility amounts to 3.7 pm/V, as retrieved from the measured conversion efficiency.

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Second harmonic generation spectroscopy of chemically modified Si(111) surfaces

Cited by 25 publications

References 35 publications

Improvedab initiocalculation of surface second-harmonic generation from Si(111)(1×1):H

Improvedab initiocalculation of surface second-harmonic generation from Si(111)(1×1):H

Polarizable-Bond Model for Surface Second-Harmonic Generation at Si(111):H (1 � 1)

Second‐Order Optical Nonlinearity in Silicon Waveguides: Inhomogeneous Stress and Interfaces

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