Search for radiation-induced electrical degradation in ion irradiated sapphire and polycrystalline Al2O3

Kesternich, W.

doi:10.1063/1.369155

Cited by 7 publications

(3 citation statements)

References 40 publications

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“…Not only the high-k samples but also the SiO 2 sample exhibits hysteresis phenomenon. This observation suggests that EUV irradiation may generate border traps at the dielectric/Si interface [6]. These traps may be charged and discharged when the gate bias changes to cause the hysteresis of the C-V curve.…”

Section: Resultsmentioning

confidence: 98%

Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics

Tsui

Yen

2011

IEEE Electron Device Lett.

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Extreme ultraviolet (EUV) irradiation may induce damages on high-dielectric-constant (high-k) dielectrics. In this letter, the EUV-irradiation-induced damages on HfSiO, HfAlO, and Al 2 O 3 are investigated. After EUV irradiation, hole traps, border traps, and interface traps are all increased. All of the three high-k dielectrics exhibit poorer immunity to the EUV irradiation than SiO 2 . The oxide traps scale down with the dielectric thickness. Interfacial layer plays an important role in the increase of border traps and interface traps. Therefore, high-quality SiO-like interfacial layer is critical for radiation-hard devices.

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Section: Resultsmentioning

confidence: 98%

Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics

Tsui

Yen

2011

IEEE Electron Device Lett.

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“…Many electrical components such as feedthroughs, mineral insulated cables and sensors with a high voltage require the high electrical resistivity for the insulation under severe conditions of a high radiation dose and high temperature. Thus, radiation effects on insulator materials have been investigated with neutron [2][3][4][5][6], electron beam [7][8][9][10][11] and ion beam irradiation [12][13][14][15][16]. The RIC of insulators increases with radiation dose rate, and the mechanism of the RIC is related to the production of electron-hole pairs and the movement, trapping and recombination of such charge carriers.…”

Section: Introductionmentioning

confidence: 99%

Impedance measurements of thin film ceramics under ion beam irradiation

Sato

Tanaka

Kagawa

et al. 2004

Journal of Nuclear Materials

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“…The low surface leakage conductance was achieved and maintained during the irradiations by shielding the insulating surface areas of the specimen from electron irradiation by a corresponding beam aperture and by using a turbomolecular pump with magnetic and thus oil-free bearings. 28 The results of the conductivity measurements as a function of irradiation dose are shown in Fig. 1.…”

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confidence: 99%

Difficulties in measuring electrical conductivities in highly insulating materials: Radiation-induced electrical degradation is an artifact

Kesternich

2000

J. Mater. Res.

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Measurement of the electrical conductivity in high-resistance insulators is made difficult by previously unrecognized limits in the electric guarding technique. Electron irradiation experiments on single-crystalline Al 2 O 3 , performed for studying the effects of irradiation on the electrical conductivity, revealed that radiation-induced electrical degradation effects in ceramic insulators, previously reported to occur after electron, ion, and neutron irradiation, are an artifact.Electrical conductivity is induced in insulating materials during ionizing irradiations as a result of the creation of electron-hole pairs. The effect is called radiation-induced conductivity (RIC). 1 RIC requires a continuous production of electron-hole pairs. Hence RIC ceases when the radiation is terminated, and after some transient time the insulating property of the material is restored. As a result of fast particle irradiations, an additional, but permanent, rise in conductivity was reported, termed radiation-induced electrical degradation (RIED). Researchers have claimed that RIED occurs when the irradiations are performed with the specimen exposed to an electric field (>30 V/mm for single-crystal Al 2 O 3 ) and at elevated temperature. 2,3 In contrast to RIC, RIED is considered highly detrimental for the use of insulator materials under irradiation, since the observed conductivity increases were cumulative.In single-and polycrystalline aluminium oxide, RIED was reported after electron, 4 -9 ion, 10 and neutron 11 irradiations. Electrical resistivity losses up to ten orders of magnitude were reported. Later, however, the existence of RIED was questioned. 12 Because of the high importance of RIED for the use of insulating materials in future fusion reactors, many experiments have since been carried out resulting in arguments for and against RIED. 13-42 As a compromise between the contradictory positions, it was suggested that the exact brand of the insulating material might determine whether RIED occurs or not, since the conductivity of insulators is sensitively dependent on the type and concentration of impurity atoms. 43 It was also suggested that the existence of RIED might depend on the type of irradiating particle. 43 Particularly for electron irradiations, where the majority of results in favor of RIED exists, 4 -9,13,14,16-18 a clarifying experiment was missing.In the present investigation, an electron irradiation experiment in search of RIED was performed on exactly the same specimen material and close to the same irradiation conditions for which RIED had been repeatedly observed and reported. 5,8,9,13,14 (The experiment was performed following the suggestions of an International Energy Agency (IEA) workshop on radiation effects in ceramic insulators. 43 ) The specimen material was part of an Al 2 O 3 single crystal (Union Carbide UV grade), provided by Dr. E.R. Hodgson, to either verify or disprove the RIED results that were obtained on another part of this same crystal.Two slices of about 2-mm thickness were cut from the...

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Search for radiation-induced electrical degradation in ion irradiated sapphire and polycrystalline Al2O3

Cited by 7 publications

References 40 publications

Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics

Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics

Impedance measurements of thin film ceramics under ion beam irradiation

Difficulties in measuring electrical conductivities in highly insulating materials: Radiation-induced electrical degradation is an artifact

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