2017
DOI: 10.1088/1742-6596/869/1/012018
|View full text |Cite
|
Sign up to set email alerts
|

Scrutiny of structural disorder using Raman spectra and Tauc parameter in GeTe2 thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
5
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(5 citation statements)
references
References 11 publications
0
5
0
Order By: Relevance
“…30 This measurement correlates optical properties to the electronic structure of the materials, being sensitive to small structural disturbances. 31 The sintering process at 1000°C shows a higher average value of Eg among materials sintered in the microwave furnace (5, 10, and 15 minutes) and conventional furnace (60 min), as shown in Figure 11, indicating an increase in local disorder (short-length), 32 which can be confirmed by the Raman data from Figure 10. The same effect of order/ disorder alternation in phase transition associated with Eg has already been observed by Guin et al (2016).…”
Section: Resultsmentioning
confidence: 64%
See 1 more Smart Citation
“…30 This measurement correlates optical properties to the electronic structure of the materials, being sensitive to small structural disturbances. 31 The sintering process at 1000°C shows a higher average value of Eg among materials sintered in the microwave furnace (5, 10, and 15 minutes) and conventional furnace (60 min), as shown in Figure 11, indicating an increase in local disorder (short-length), 32 which can be confirmed by the Raman data from Figure 10. The same effect of order/ disorder alternation in phase transition associated with Eg has already been observed by Guin et al (2016).…”
Section: Resultsmentioning
confidence: 64%
“…To analyze the evolution of the material due to the thermal effect and their reflections in the optical gap, the parameters Tauc or Eg , applied to determine the optical bandgap in semiconductors, were used 30 . This measurement correlates optical properties to the electronic structure of the materials, being sensitive to small structural disturbances 31 …”
Section: Resultsmentioning
confidence: 99%
“…[26] It is mentioned that damped motion of charge carriers which are accelerated in the direction of the photon electric field parallel to the film surface and propagating at normal incidence can result in the free carrier absorption phenomena in the films. [30] To gain information about the nature of the optical transitions in the films Tauc's equation ( (𝛼E) n = B n (E − E g ), B is Tauc parameter) was employed. [25][26][27] The fitting of the equation is illustrated in Figure 2d.…”
Section: Resultsmentioning
confidence: 99%
“…[ 26 ] It is mentioned that damped motion of charge carriers which are accelerated in the direction of the photon electric field parallel to the film surface and propagating at normal incidence can result in the free carrier absorption phenomena in the films. [ 30 ]…”
Section: Resultsmentioning
confidence: 99%
“…In addition, a peak at around 238 cm −1 may originate from ionized Te dimers (Te 2 − color center) or Te 2 or Te n clusters. [34][35][36] Another possible identification of this peak is TeO 3 2− (specifically the OH units in the hydrogen bonding of (TeO 3 ) 2− units [37] ) at the expense of those with higher wavenumbers, indicating that the glass network is progressively cleaved. A few other studies state that this peak may also be related to the formation of WO 3 crystals, [38,39] rhombohedral-TeO 3 , [40] or β-TeO 2 crystals.…”
Section: Formation Of T-te On Tellurite Glass Surface: From a Single ...mentioning
confidence: 99%