2013
DOI: 10.2961/jlmn.2013.03.0009
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Scribe Width Optimization of Absorber Laser Ablation for Thin-film Silicon Solar Modules

Abstract: Ultrashort pulse lasers have been established as precise and universal tools for the micromachining of solid materials (cutting, texturing …). For these applications the quality of the cutting cross-section is important. The use of a Gaussian beam profile and linear polarization leads to tapered cutting sidewalls. It is possible to change the polarization orientation in order to machine a material for obtaining straight and vertical sidewalls. For this purpose a specific polarization converter was used. The tr… Show more

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Cited by 13 publications
(21 citation statements)
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“…These can be resumed in a parameter, named Total Loss (TL). [53,54] The TL can be expressed as a function of AA width (WA) and DA width (WD), for a fixed value of P1, P3, and SA widths and a defined transfer length ( ) in the P2 process. The TL is composed by three main parts: geometrical losses due to the realization of DA; Ohmic losses over the AA, due to the non--negligible FTO sheet resistance; Ohmic losses over the interconnection area realized with the P2 step.…”
Section: E Design and Fabrication Of Psm With An Ar Of 95%mentioning
confidence: 99%
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“…These can be resumed in a parameter, named Total Loss (TL). [53,54] The TL can be expressed as a function of AA width (WA) and DA width (WD), for a fixed value of P1, P3, and SA widths and a defined transfer length ( ) in the P2 process. The TL is composed by three main parts: geometrical losses due to the realization of DA; Ohmic losses over the AA, due to the non--negligible FTO sheet resistance; Ohmic losses over the interconnection area realized with the P2 step.…”
Section: E Design and Fabrication Of Psm With An Ar Of 95%mentioning
confidence: 99%
“…The TL is composed by three main parts: geometrical losses due to the realization of DA; Ohmic losses over the AA, due to the non--negligible FTO sheet resistance; Ohmic losses over the interconnection area realized with the P2 step. By extending the procedure in [54] and according to well-known mathematical models, [53,55,56] we can express the TL in terms of module parameters:…”
Section: E Design and Fabrication Of Psm With An Ar Of 95%mentioning
confidence: 99%
“…Previous investigations on the P2 ablation behavior showed a difference in the squared crater diameter D 2 between processing of a-Si:H and tandem solar cells (shift in the y-axis) [15]. For P3 processing with 60 and 20 lm, the Liu-Plots show almost no difference in crater diameter between the two absorber types for the same incident laser peak fluence.…”
Section: Materials Ablation Behaviormentioning
confidence: 92%
“…Our previous works on this topic found a strong influence of the scribe width on P1 and P2 [14,15]. The present work extends the research on the back-contact insulation process P3 for the integrated series connection of thin-film silicon solar cells in superstrate configuration [16].…”
Section: Introductionmentioning
confidence: 94%
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