2011
DOI: 10.1021/nl202689m
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Screw Dislocation-Driven Growth of Two-Dimensional Nanoplates

Abstract: We report the dislocation-driven growth of two-dimensional (2D) nanoplates. They are another type of dislocation-driven nanostructure and could find application in energy storage, catalysis, and nanoelectronics. We first focus on nanoplates of zinc hydroxy sulfate (3Zn(OH)(2)·ZnSO(4)·0.5H(2)O) synthesized from aqueous solutions. Both powder X-ray and electron diffraction confirm the zinc hydroxy sulfate (ZHS) crystal structure as well as their conversion to zinc oxide (ZnO). Scanning electron, atomic force, an… Show more

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Cited by 181 publications
(228 citation statements)
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“…Bright field TEM images of some of the particles also displayed multiple contours with different contrast ( Figure S6c) also indicating screw dislocation phenomenon. However,i nc ontrast with previous nanostructures obtained by screw dislocation, [12] larger SnSe 2 structures were produced from the screw growth of multiple dislocations generated at the edge of the growing structure.T hese multiple growth centres resulted in afaster overall growth at the nanostructure edges than the centre and thus led to the formation of flowerlike structures (Figure 2c and d). [11] Thes mallest SnSe 2 structures produced following our procedure were found to originate from asingle or few dislocations,resulting in approximately planar circular pyramids due to the overall faster vertical growth of the center of the structure compared to the edges ( Figure 2b).…”
supporting
confidence: 58%
“…Bright field TEM images of some of the particles also displayed multiple contours with different contrast ( Figure S6c) also indicating screw dislocation phenomenon. However,i nc ontrast with previous nanostructures obtained by screw dislocation, [12] larger SnSe 2 structures were produced from the screw growth of multiple dislocations generated at the edge of the growing structure.T hese multiple growth centres resulted in afaster overall growth at the nanostructure edges than the centre and thus led to the formation of flowerlike structures (Figure 2c and d). [11] Thes mallest SnSe 2 structures produced following our procedure were found to originate from asingle or few dislocations,resulting in approximately planar circular pyramids due to the overall faster vertical growth of the center of the structure compared to the edges ( Figure 2b).…”
supporting
confidence: 58%
“…4a) in which the degradation of the area of sample can be seen after the high-resolution study. The low stability of hydroxides under the high energy electron beam of the transmission electron microscopy has been reported by some authors [40,41]. Fig.…”
Section: Resultsmentioning
confidence: 71%
“…For example, MBE growth of TI chalcogenides on substrates such as GaAs and Si initiates from a dislocation [107,108]. Screw dislocation-driven growth of 2D ZnO nanoplates by chemical synthesis has also been observed [109]. Similar growth mechanism may be possible in TI nanomaterials.…”
Section: Future Experiments Using Ti Nanostructuresmentioning
confidence: 92%