Screening of Excitons in Semiconductors

Gay, J. G.

doi:10.1103/physrevb.4.2567

Cited by 85 publications

(31 citation statements)

References 9 publications

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“…Gay [12] was the first to p u t together self-energy and screened potential. Although his semi-empirical approach is only applicable in the limiting cases of low and high density the result was a nearly constant exciton energy -at that time considered fortuitous.…”

Section: Introductionmentioning

confidence: 99%

Dynamical screening and self‐energy of excitons in the electron–hole plasma

Zimmermann¹,

Kilimann

Kraeft

et al. 1978

Physica Status Solidi (b)

270

104

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The dependence of two-particle energies on plasma density is investigated using Green's functions. An effective exciton equation is derived taking into account dynamically screened potential and one-particle self-energies. A variational calculation shows that the bound state levels (exciton energies) remain practically constant whereas the continuum edge (band gap) shifts to lower energies with increasing density, which is in accordance with experimental observations. Die Abhiingigkeit der Zwei-Teilchen-Energien von der Plasmadichte wird im Formalismus Greenscher Funktionen untersucht. Es wird eine effektive Exziton-Gleichung abgeleitet, die ein dynamisch abgeschirmtes Potential und Ein-Teilchen-Selbstenergien beriicksichtigt. Eine Variationsrechuung zeigt, deD Energieniveaus gebundener Zustiinde (Exzitonenenergien) praktisch konstant bleiben, wiihrend sich die Kontinuumskante (die Bandliicke) mit wachsender Dichte zu kleineren Energien verschiebt, was mit experimentellen Ergebnissen ubereinstimmt.

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Section: Introductionmentioning

confidence: 99%

Dynamical screening and self‐energy of excitons in the electron–hole plasma

Zimmermann¹,

Kilimann

Kraeft

et al. 1978

Physica Status Solidi (b)

270

104

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“…This relative constancy of the exciton energy (here A p ) in spite of a rapidly decreasing binding energy is well known also for excitons in the presence of free carriers [13]. I n the second row of Table 1 we have listed the results within the Lundqvist-Inkson pole (LIP) approximation obtained from a numerical integration of (4.15) with (A.14).…”

Section: (411)mentioning

confidence: 84%

Excitons and Electron‐Hole Plasma. A Ground State Calculation

Zimmermann

1976

Physica Status Solidi (b)

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For calculating the energy per pair g,, in a highly excited semiconductor a Green's function theory is presented which covers the whole density range from the exciton limit to the electron-hole plasma at high densities. Extensive use is made of the analogy to the excitonic phase theory which is extended here to include correlation and dynamical screening. I n a model with equal-mass parabolic bands a rather shallow minimum of iS, somewhat below the exciton energy is found at the density rS = 3. I m Formalismus Greenscher

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“…We assume that the concentration of carriers is high enough (say, typically of the order or larger than 10 16 cm À3 ) such that, instead of the excitons gas a two-component Fermi liquid of electrons and holes is formed ( highly excited plasma), i.e. the system is on the metallic side of the Mott transition with n > n M ðT Ã c Þ [27]. The sample is taken to be an open system, in contact with a source and a reservoir composed of the laser and a thermostat, respectively.…”

Section: Model and Methodsmentioning

confidence: 99%