Numerical analysis of the relaxation of photoexcited carriers and the hot-phonon effect in GaN

Silva, A.A.P.; Nascimento, Valter Aragão do

doi:10.1016/j.jlumin.2003.11.002

Cited by 6 publications

(2 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In particular, in 2004 itself, Gökden [302], Ridley et al [303], and Silva and Nascimento [304], to name just three, presented results related to this research focus. These results suggest that hotphonon effects play a role in influencing the nature of the electron transport within wurtzite GaN.…”

Section: Electron Transport Within Gan: a Reviewmentioning

confidence: 60%

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

Siddiqua

O’Leary

2018

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and opto-electronic device applications. As informed device design requires a firm grasp on the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. We review analyses of the electron transport within some wide energy gap semiconductors of current interest. In this thesis, I primarily focus on the electron transport that occurs within the wurtzite and zinc-blende phases of gallium nitride and indium nitride, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor of itself, is included as it is often alloyed with other wide energy gap semiconductors. The electron transport that occurs within zinc-blende gallium arsenide has also been considered. Most of the discussion focus on the steady-state and transient electron transport results obtained from the ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials.The evolution of the field, a survey of the current literature, and some applications for the results will also be featured. Based on this analysis, we have drawn the following conclusions. First, it is found that all of the velocityfield characteristics corresponding to the materials under investigation in this analysis exhibit peaks, regions of negative differential mobility, and regions of high-field saturation. Wurtzite Indium nitride, with its small electron effective mass, exhibits the highest peak electron drift velocity. The transient overshoot observed for the case of wurtzite Indium nitride is also found to be the most pronounced of all of the materials considered in this analysis. This suggests that the wurtzite phase of Indium nitride and its zinc-blende counterpart may offer great potential for future electron device applications. vi Rensselaer Polytechnic Institute, for example, was one of the first researchers to explore the wide energy gap semiconductors, GaN and InN, through the use of Monte Carlo electron transport simulations. In fact, some of his initial explorations into the nature of the electron transport within these materials were performed by him in concert with Dr. O'Leary. Dr. Shur and Dr. O'Leary have established a vigorous and active research collaboration, and the papers that I wrote within the scope of my doctoral studies were merely the latest of a large number of publications that have arisen from this collaboration. Dr. Shur commented on each manuscript, and made some suggestions in terms of interpreting the results. These definitely helped improve the clarity and effectiveness of my publications.

show abstract

Section: Electron Transport Within Gan: a Reviewmentioning

confidence: 60%

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

Siddiqua

O’Leary

2018

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

show abstract

“…In particular, in 2004 itself, Gökden [176], Ridley et al [177], and Silva and Nascimento [260], to name just three, presented results related to this research focus. These results suggest that hot-phonon effects play a role in influencing the nature of the electron transport within wurtzite GaN.…”

Section: Electron Transport Within Gan: a Reviewmentioning

confidence: 60%

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving and burgeoning field of research, we review analyzes of the electron transport within some wide energy gap semiconductors of current interest in this paper. In order to narrow the scope of this review, we will primarily focus on the electron transport that occurs within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide in this review, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor in of itself, is included as it is often alloyed with other wide energy gap semiconductors, the resultant alloys being wide energy gap semiconductors themselves. The electron transport that occurs within zinc-blende gallium arsenide is also considered, albeit primarily for bench-marking purposes. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art wide energy gap semiconductor orthodoxy. A brief tutorial on the Monte Carlo electron transport simulation approach, this approach being used to generate the results presented herein, is also provided. Steady-state and transient electron transport results are presented. The evolution of the field, and a survey of the current literature, are also featured. We conclude our review by presenting some recent developments on the electron transport within these materials.

show abstract

Electron Transport Within the III–V Nitride Semiconductors, GaN, AIN, and InA: A Monte Carlo Analysis

Foutz

O’Leary

Shur

et al. 2006

Springer Handbook of Electronic and Photonic Materials

View full text Add to dashboard Cite

Numerical analysis of the relaxation of photoexcited carriers and the hot-phonon effect in GaN

Cited by 6 publications

References 45 publications

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Electron Transport Within the III–V Nitride Semiconductors, GaN, AIN, and InA: A Monte Carlo Analysis

Contact Info

Product

Resources

About