Screening and optimization of processing temperature for Sb2Se3 thin film growth protocol: Interrelation between grain structure, interface intermixing and solar cell performance

Spalatu, Nicolae; Krautmann, Robert; Katerski, Atanas; Kärber, Erki; Josepson, Raavo; Hiie, J.; Açik, Ilona Oja; Krunks, Malle

doi:10.1016/j.solmat.2021.111045

Cited by 39 publications

(43 citation statements)

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“…The [Se] atomic content increases from 11.21 to 17.87% and the [S] atomic content reduces from 48.40 to 40.94% when the evaporation temperature of Sb 2 S 3 is reduced from 520 to 480 °C (Figure d). The XRD intensity of Sb 2 (S, Se) 3 films also shows high crystallinity (Figure S7a), and the (221) XRD peak position shifts to lower 2θ values (Figure S7b), in line with the reduction of the [S] atomic content . As shown in Figure e, the band gap changes from 1.61 to 1.33 eV when the Sb 2 S 3 evaporation temperature decreases from 520 to 480 °C (Figure S8).…”

Section: Resultsmentioning

confidence: 74%

“…The XRD intensity of Sb 2 (S, Se) 3 films also shows high crystallinity (Figure S7a), and the (221) XRD peak position shifts to lower 2θ values (Figure S7b), in line with the reduction of the [S] atomic content. 34 As shown in Figure 2e, the band gap changes from 1.61 to 1.33 eV when the Sb 2 S 3 evaporation temperature decreases from 520 to 480 °C (Figure S8). Overall, the band gaps of Sb 2 (S, Se) 3 films can be adjusted continuously by controlling the temperature of Sb 2 Se 3 evaporation sources.…”

Section: ■ Results and Discussionmentioning

confidence: 87%

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HTL-Free Sb₂(S, Se)₃ Solar Cells with an Optimal Detailed Balance Band Gap

Yang

et al. 2021

ACS Appl. Mater. Interfaces

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Antimony chalcogenides are widely studied as a light-absorbing material due to their merits of low toxicity, efficient cost, and excellent photovoltaic properties. However, the band gaps of antimony selenide (approximately 1.1 eV) and antimony sulfide (approximately 1.7 eV) both deviate from the optimal detailed balance band gap (∼1.3 eV) for terrestrial single-junction solar cells. Notably, the band gap of Sb 2 (S, Se) 3 can be tunable in the range from 1.1 to 1.7 eV, which can cover the detailed balance band gap. In this work, the vapor transport deposition method with two independent evaporation sources is used to deposit Sb 2 (S, Se) 3 thin films. By carefully optimizing the evaporation temperature and the start evaporation time of the Sb 2 Se 3 and Sb 2 S 3 sources, a suitable band gap of 1.33 eV is obtained. Finally, on the basis of the optimal Sb 2 (S, Se) 3 films, Sb 2 (S, Se) 3 solar cells without a hole transport layer achieved an efficiency of 7.03%.

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Section: Resultsmentioning

confidence: 74%

Section: ■ Results and Discussionmentioning

confidence: 87%

HTL-Free Sb₂(S, Se)₃ Solar Cells with an Optimal Detailed Balance Band Gap

Yang

et al. 2021

ACS Appl. Mater. Interfaces

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“…Moreover, the collapse of the EQE response occurs between 750 and 700 nm, which is the wavelength region corresponding to the band gap of CdSe (around 1.72 eV), indicating the possible formation of this not photoactive compound at the junction. 25 Thus, while the stoichiometry of the absorber is enhanced by co-selenization and even more by the post-selenization process, the quality of the junction deteriorates; the presence of CdS appears to be a limiting factor in improving the devices. A possible solution could be the replacement of CdS with a more suitable buffer layer, such as TiO 2 .…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…In addition, in a previous study on CdSe x Te 1– x -based solar cells, we have already proven the degradation of CdS after the selenization of the layer above it. Moreover, the collapse of the EQE response occurs between 750 and 700 nm, which is the wavelength region corresponding to the band gap of CdSe (around 1.72 eV), indicating the possible formation of this not photoactive compound at the junction . Thus, while the stoichiometry of the absorber is enhanced by co-selenization and even more by the post-selenization process, the quality of the junction deteriorates; the presence of CdS appears to be a limiting factor in improving the devices.…”

Section: Results and Discussionmentioning

confidence: 99%

Analysis of Se Co-evaporation and Post-selenization for Sb₂Se₃-Based Solar Cells

Kumar

Artegiani

Punathil

et al. 2021

ACS Appl. Energy Mater.

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Sb2Se3 is a promising alternative absorber material for thin-film solar cells. However, by a thermal evaporation technique, it appears to partially decompose, leading to Se deficiency. In this work, we propose two alternative routes for the supply of selenium in the deposition of Sb2Se3 thin films. The first method is the co-evaporation of Se and Sb2Se3, while the second is the post-deposition selenization. Superstrate glass/FTO/TO/CdS/Sb2Se3/Au-configured thin-film cells are grown using thermal evaporation. X-ray diffraction patterns confirm the presence of CdS peaks along with the preferred (hk1) oriented grains, which are suppressed upon selenization. Modified surface morphology for the selenized samples is observed by atomic force microscopy. Enhanced current density is observed by J–V characterization and also confirmed by a remarkable external quantum efficiency (EQE) gain at long wavelengths. However, CdS deterioration reduces the EQE response in the short wavelength region, acting as a limiting factor for the efficiency improvement. The champion cell shows a power conversion efficiency of 3.6% with an open circuit voltage of 352 mV and a fill factor of 44.2%, which results in, to our knowledge, the highest value for thermally evaporated Sb2Se3 in superstrate configuration.

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“…A comprehensive overview on the origin of defects existing in Sb 2 Se 3 -based solar cells can be in found in ref. [11] while ref. [12] specifically reports on the existence of a deep defect at 0.39 eV, with a concentration possibly as high as 10 17 cm À3 .…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation of Interface Passivation Strategies for Sb₂Se₃/CdS Solar Cells

et al. 2021

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Sb2Se3 is an emerging earth‐abundant material praised for its promising optoelectronic properties, although the presence of interfacial defects at the vicinity of the p–n junction limit its performance as photovoltaic absorber. Using a device modeling approach and a realistic set of material parameters, it unravels pathways mitigating the impact of interfacial defects with a baseline Sb2Se3/CdS. Two straightforward strategies are devised and tested against the baseline. First, a thin front surface sulfurization of the Sb2Se3 absorber allowing a local lowering of the valence band and creating a “front surface field,” resulting in an increased carrier selectivity and limiting the density of holes available for interface recombination, leading to a significant efficiency improvement for optimized conditions. Second, the use of an ultrathin insulating Al2O3 layer between the absorber and the buffer layer is considered, helping in preventing detrimental chemical interdiffusion at the junction. This strategy provides a direct interface passivation, though the interlayer thickness needs a fine tuning to balance the benefits of reduced interface recombination and a detrimental Al2O3 low‐conductivity layer. In each case, an analysis covering a broad range of parameters is presented, and conclusions are made in the frame of past numerical and experimental results.

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Screening and optimization of processing temperature for Sb2Se3 thin film growth protocol: Interrelation between grain structure, interface intermixing and solar cell performance

Cited by 39 publications

References 50 publications

HTL-Free Sb₂(S, Se)₃ Solar Cells with an Optimal Detailed Balance Band Gap

HTL-Free Sb₂(S, Se)₃ Solar Cells with an Optimal Detailed Balance Band Gap

Analysis of Se Co-evaporation and Post-selenization for Sb₂Se₃-Based Solar Cells

Numerical Investigation of Interface Passivation Strategies for Sb₂Se₃/CdS Solar Cells

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Screening and optimization of processing temperature for Sb2Se3 thin film growth protocol: Interrelation between grain structure, interface intermixing and solar cell performance

Cited by 39 publications

References 50 publications

HTL-Free Sb2(S, Se)3 Solar Cells with an Optimal Detailed Balance Band Gap

HTL-Free Sb2(S, Se)3 Solar Cells with an Optimal Detailed Balance Band Gap

Analysis of Se Co-evaporation and Post-selenization for Sb2Se3-Based Solar Cells

Numerical Investigation of Interface Passivation Strategies for Sb2Se3/CdS Solar Cells

Contact Info

Product

Resources

About

HTL-Free Sb₂(S, Se)₃ Solar Cells with an Optimal Detailed Balance Band Gap

HTL-Free Sb₂(S, Se)₃ Solar Cells with an Optimal Detailed Balance Band Gap

Analysis of Se Co-evaporation and Post-selenization for Sb₂Se₃-Based Solar Cells

Numerical Investigation of Interface Passivation Strategies for Sb₂Se₃/CdS Solar Cells