1989
DOI: 10.1016/0165-1633(89)90040-3
|View full text |Cite
|
Sign up to set email alerts
|

Screen-printed titanium dioxide anti-reflection coating for silicon solar cells

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
10
0

Year Published

1993
1993
2023
2023

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 21 publications
(10 citation statements)
references
References 12 publications
0
10
0
Order By: Relevance
“…This was due to its versatility and low cost. TiO x showed optimal optical properties to act as an antireflection coating between a silicon surface and an Ethylene Vinyl Acetate (EVA) encapsulant film used when packing cells into modules . The ideal refractive index for the top antireflection layer in encapsulated cell is ∼2.1 at λ = 630 nm .…”
Section: Materials and Methods For Silicon Surface Passivationmentioning
confidence: 99%
See 1 more Smart Citation
“…This was due to its versatility and low cost. TiO x showed optimal optical properties to act as an antireflection coating between a silicon surface and an Ethylene Vinyl Acetate (EVA) encapsulant film used when packing cells into modules . The ideal refractive index for the top antireflection layer in encapsulated cell is ∼2.1 at λ = 630 nm .…”
Section: Materials and Methods For Silicon Surface Passivationmentioning
confidence: 99%
“…The ideal refractive index for the top antireflection layer in encapsulated cell is ∼2.1 at λ = 630 nm . Deposition of TiO x was performed using either chemical or physical vapour techniques , and its use extended beyond that of the solar industry, most prominently in glass manufacturing as a protection coating deposited using ultra‐high throughput techniques . Despite its ideal optical properties, TiO x was replaced by hydrogenated silicon nitride (SiN x ) since the evolution of silicon solar cells required appropriate passivation of the cells front surface, and this could not be accomplished using TiO x .…”
Section: Materials and Methods For Silicon Surface Passivationmentioning
confidence: 99%
“…119 No etching of spray-and APCVD-deposited TiO 2 films have been observed during a 5 min cleaning step with boiling H 2 SO 4 :H 2 O 2 (1:5). 90 The reported resistance of TiO 2 versus other acids such phosphoric acid (H 3 PO 4 ), 115,119 nitric acid (HNO 3 ), 115 and HCl 21,94,115,122 all follow the trend of increased resistance at higher deposition or annealing temperatures.…”
Section: Chemical Resistance Of Tiomentioning
confidence: 96%
“…98 While other researchers have previously observed that oxygen is capable of diffusing through TiO 2 thin films to form an interfacial SiO 2 layer, the formation of an interfacial layer was not capitalised upon. 88,122,128 A scanning electron microscopy (SEM) image of a sample that has undergone an oxidation step after TiO 2deposition is shown in Figure 12. Confirmation that the interfacial layer is indeed SiO 2 was obtained by X-ray photoelectron spectrometry (XPS) analysis.…”
Section: Chemical Resistance Of Tiomentioning
confidence: 99%
“…In recent years, titanium dioxide thin and thick films have found many applications because of their chemical stability, non-toxicity and possession of unique optical characteristics; such as good photocatalytic activity, high melting point, and high reflective index wide direct-bandgap, which means high transmittance in the visible and near-IR regions. For example, in the last two decades, TiO 2 films have been used extensively as anode in dye sensitized solar cells [1], as a photocatalyst [2], an antireflection coating in silicon solar cells [3] and a gas sensor [4]. TiO 2 has been prepared using physical thermal vapor deposition [5], chemical bath deposition [6], chemical spray pyrolysis [7], hydrothermal method [8], etc.…”
Section: Introductionmentioning
confidence: 99%