Screen-printed Tin-doped indium oxide (ITO) films for NH3 gas sensing

Mbarek, H.; Saadoun, M.; Bessaı̈s, B.

doi:10.1016/j.msec.2005.10.037

Cited by 66 publications

(37 citation statements)

References 26 publications

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“…The firing time was varied from 15 to 70 min. In order to test the electrical behaviour of ITO films, the latter were introduced into a test chamber using a calibrated syringe having a minimum volume of 10 µl [8]. All measurements were performed in ambient atmosphere and at room temperature.…”

Section: Methodsmentioning

confidence: 99%

Porous screen printed indium tin oxide (ITO) for NO_x gas sensing

Mbarek

Saadoun

Bessaı̈s³

2007

Phys. Status Solidi (c)

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Tin-doped Indium Oxide (ITO) films were prepared by the screen printing method. Transparent and conductive ITO thin films were obtained from an organometallic based paste fired in an Infrared furnace. The Screen printed ITO films were found to be granular and porous. This specific morphology was found to be suitable for sensing different gaseous species. This work investigates the possibility of using screen printed (ITO) films as a specific material for efficient NO x gas sensing. It was found that screen printed ITO is highly sensitive and stable towards NO x , especially for gas concentration higher than 50 ppm and starting from a substrate working temperature of about 180 °C. The sensitivity of the ITO films increases with increasing NO x concentration and temperature. The sensitivity and stability of the screen printed ITO based sensors were studied within time. The ITO crystallite grain size dimension was found to be a key parameter that influencesè the gas response characteristics. Maximum gas sensitivity and minimum response time were observed for ITO films having lower crystallite size dimensions.

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Section: Methodsmentioning

confidence: 99%

Porous screen printed indium tin oxide (ITO) for NO_x gas sensing

Mbarek

Saadoun

Bessaı̈s³

2007

Phys. Status Solidi (c)

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“…Figure 3 depicts the dependence of sensitivity on the resistivity. Figure 3(a) shows the previous results about the ITO-thin film based gas sensors [13][14][15]. One can clearly observe that the sensitivity inversely depends on the resistivity of the ITO film.…”

Section: Resultsmentioning

confidence: 66%

“…In particular, metal oxides such as TiO 2 , ZnO, SnO 2 , In 2 O 3 and indium tin oxide (ITO) [1][2][3][4] has been regarded as a material which has a great potential as the next generation gas sensor. However, there are several restrictions to be overwhelmed.…”

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confidence: 99%

Room temperature operation of ITO nano‐crystal gas sensor

Koo

Park

Lee

et al. 2013

Phys. Status Solidi C

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We proposed an indium‐tin‐oxide (ITO) based gas sensor which can operate at room temperature. ITO nano‐crystal was screen printed on a quartz substrate. To improve the sensitivity and to decrease the resistivity of the printed ITO layer, pressurized annealing was adopted. Resistivity of the printed ITO gas sensor decreased from 3.5 kΩcm to 1.56 Ωcm by pressurized annealing. We could observe room temperature operation of the printed ITO gas sensor by using various gases such as Ar, N2, O2 and CH4. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…[9][10][11][12] Additionally, high-surface-area mesoporous ITO films have been used as sensors for gases, such as ammonia, nitric oxide, ethanol and methanol. [13][14][15][16] Moreover, ITO films and ITO/TiO 2 core-shell structures have been utilized as photoanodes in both dye-sensitized solar cells (DSCs) and water oxidation devices. [17][18][19][20] A recent spectroscopic investigation into the charge transfer dynamics of dye-coated ITO films revealed that ITO can both accept and donate electrons during photoinduced charge transfer.…”

Section: Introductionmentioning

confidence: 99%

Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells

Perera

Daeneke

et al. 2016

NPG Asia Mater

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Indium tin oxide (ITO) is a well-known n-type degenerate semiconductor with a wide variety of electronic and optoelectronic applications. Herein ITO is utilized as a photocathode material in p-type dye-sensitized solar cells in place of the commonly applied and highly colored nickel oxide (NiO) semiconductor. The application of mesoporous ITO photocathodes, [Fe(acac) 3 ] 0/ − as a redox mediator and a new organic dye afforded an impressive energy conversion efficiency of 1.96 ± 0.12%. Comparative transient absorption spectroscopic studies indicated that the recombination rate at the ITO-electrolyte interface is two orders of magnitude faster than that of NiO. Analysis of the operation mechanism of the ITO-based devices with ultraviolet photon spectroscopy and photoelectron spectroscopy in air showed that ITO exhibits a significant local density of states arising below − 4.8 eV, which enables electron transfer to occur from the ITO to the excited dye, thus giving rise to the sustained photocathodic current. NPG Asia Materials (2016) 8, e305; doi:10.1038/am.2016.89; published online 9 September 2016 INTRODUCTION Transparent conducting oxides have been extensively used in optoelectronic applications. 1-3 One common transparent conducting oxide is indium tin oxide (ITO). ITO is a well-known n-type degenerate semiconductor 4 with an optical band gap of 3.5-4.3 eV 5 and has a high transmission in the near infrared and visible regions of the electromagnetic spectrum. Owing to their high optical transparency, good electrical conductivity, chemical inertness, hardness and excellent substrate adherence, 6-8 ITO thin films are applied in flat panel displays, antistatic coatings, solar cells, camera lenses and architectural glazing. 9-12 Additionally, high-surface-area mesoporous ITO films have been used as sensors for gases, such as ammonia, nitric oxide, ethanol and methanol. [13][14][15][16] Moreover, ITO films and ITO/TiO 2 core-shell structures have been utilized as photoanodes in both dye-sensitized solar cells (DSCs) and water oxidation devices. [17][18][19][20] A recent spectroscopic investigation into the charge transfer dynamics of dye-coated ITO films revealed that ITO can both accept and donate electrons during photoinduced charge transfer. 21,22 By exploiting the ambivalent property of this degenerate n-type semiconductor, we have developed an efficient p-type DSC (p-DSC)

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Screen-printed Tin-doped indium oxide (ITO) films for NH3 gas sensing

Cited by 66 publications

References 26 publications

Porous screen printed indium tin oxide (ITO) for NO_x gas sensing

Porous screen printed indium tin oxide (ITO) for NO_x gas sensing

Room temperature operation of ITO nano‐crystal gas sensor

Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells

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Screen-printed Tin-doped indium oxide (ITO) films for NH3 gas sensing

Cited by 66 publications

References 26 publications

Porous screen printed indium tin oxide (ITO) for NOx gas sensing

Porous screen printed indium tin oxide (ITO) for NOx gas sensing

Room temperature operation of ITO nano‐crystal gas sensor

Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells

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Product

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About

Porous screen printed indium tin oxide (ITO) for NO_x gas sensing

Porous screen printed indium tin oxide (ITO) for NO_x gas sensing