2016
DOI: 10.1038/am.2016.89
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Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells

Abstract: Indium tin oxide (ITO) is a well-known n-type degenerate semiconductor with a wide variety of electronic and optoelectronic applications. Herein ITO is utilized as a photocathode material in p-type dye-sensitized solar cells in place of the commonly applied and highly colored nickel oxide (NiO) semiconductor. The application of mesoporous ITO photocathodes, [Fe(acac) 3 ] 0/ − as a redox mediator and a new organic dye afforded an impressive energy conversion efficiency of 1.96 ± 0.12%. Comparative transient ab… Show more

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Cited by 88 publications
(64 citation statements)
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“…PESA analysis is usually conducted to determine work function of metals and the ionization potential (IP) of semiconductors. The IP of semiconductors may refer to either the valence band position or to trap states within the bandgap, provided that their density is high enough to result in a detectable signal . The PESA spectrum of Ga 2 O 3 (Figure c) reveals an unusual two‐step dependency instead of the commonly observed single emission edge.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…PESA analysis is usually conducted to determine work function of metals and the ionization potential (IP) of semiconductors. The IP of semiconductors may refer to either the valence band position or to trap states within the bandgap, provided that their density is high enough to result in a detectable signal . The PESA spectrum of Ga 2 O 3 (Figure c) reveals an unusual two‐step dependency instead of the commonly observed single emission edge.…”
Section: Resultsmentioning
confidence: 99%
“…The observations are similar to reports on tin‐doped indium oxide, where the measured IP corresponds to the top of the dopant‐associated trap band and the PESA signal corresponds to the Fermi level of the material. [23a]…”
Section: Resultsmentioning
confidence: 99%
“…Among the available wide band‐gap metal oxides, tin‐doped indium oxide (ITO) has the great advantage of combining high electrical conductivity with good transparency in the visible. Moreover, as degenerate n ‐type semiconductors, nanostructured films of ITO can be used either as photoanodes or photocathodes, depending on the type of dye‐sensitizer and light excitation …”
Section: Figurementioning
confidence: 99%
“…Moreover, as degenerate n-type semiconductors, [1] nanostructured films of ITO can be used either as photoanodes or photocathodes, depending on the type of dye-sensitizer and light excitation. [2][3][4][5][6] One of the crucial issues for efficient and stable dyesensitized photoelectrodes is the degree of electronic coupling and stability with which the molecular sensitizer is chemically anchored onto the metal oxide surface. Indeed, it has to be strong enough to withstand the hydrolytic conditions generally required for sustainable and eco-friendly devices, [7] and, at the same time, it must lead to an efficient electronic coupling between the dye and the metal oxide to allow fast interfacial electron transfer reactions.The most commonly used method for dye sensitization of metal oxide surfaces is by chemisorption of carboxylate or phosphonate anchoring groups present on the dye molecule.…”
mentioning
confidence: 99%
“…After photoexcitation of the sensitizer, in n-type DSSCs an electron is injected into the conduction band of the semiconductor, whereas in the p-type DSSCs a hole is injected in the valence band of the semiconductor. Efforts have been made towards fabricating purely p-type DSSCs, such as the manufacture of indium tin oxide (ITO) photoanodes by Yu et al 13 . Despite making use of [Fe(acac) 3 ] 0/-solution as the redox electrolyte, a PCE value of only about 1.96% (0.12%) was reported.…”
Section: Recent Developments In Photoanode Fabricationmentioning
confidence: 99%