<scp>TCAD</scp>‐based <scp>DLTS</scp> simulation for analysis of extended defects

Scheinemann, Artur; Schenk, Andreas

doi:10.1002/pssa.201300233

Cited by 7 publications

(6 citation statements)

References 24 publications

(24 reference statements)

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“…Figure 4 shows that to a good approximation for all three topologies, E a (f t ) is linear in f t . Loop clusters are discussed in [12], which actually triggered our studies.…”

Section: Analysis Methodsmentioning

confidence: 87%

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Study of point- and cluster-defects in radiation-damaged silicon

Donegani

Fretwurst

Garutti

et al. 2018

Nuclear Instruments and Methods in Physics Research Section A:

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Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a significant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect spectroscopy for silicon pad diodes irradiated by electrons to fluences of a few 10 14 cm −2 and energies between 3.5 and 27 MeV for isochronal annealing between 80 and 280 • C, are presented. A method based on SRH (Shockley-Read-Hall) statistics is introduced, which assumes that the ionisation energy of the defects in a cluster depends on the fraction of occupied traps. The difference of ionisation energy of an isolated point defect and a fully occupied cluster, ∆E a , is extracted from the TSC data.For the VO i (vacancy-oxygen interstitial) defect ∆E a = 0 is found, which confirms that it is a point defect, and validates the method for point defects. For clusters made of deep acceptors the ∆E a values for different defects are determined after annealing at 80 • C as a function of electron energy, and for the irradiation with 15 MeV electrons as a function of annealing temperature. For the irradiation with 3.5 MeV electrons the value ∆E a = 0 is found, whereas for the electron energies of 6 to 27 MeV ∆E a > 0. This agrees with the expected threshold of about 5 MeV for cluster formation by electrons. The ∆E a values determined as a function of annealing temperature show that the annealing rate is different for different defects. A naive diffusion model is used to estimate the temperature dependencies of the diffusion of the defects in the clusters.

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“…Figure 4 shows that to a good approximation for all three topologies, E a (f t ) is linear in f t . Loop clusters are discussed in [12], which actually triggered our studies.…”

Section: Analysis Methodsmentioning

confidence: 87%

“…For point defects a constant value for E a is expected. As proposed in [12], cluster defects can be characterized by an occupation-dependent value of E a (f t ). For the dependence E a (f t ), i. e. the change of the ionisation energy with the fraction f t of defects filled in a cluster, a linear dependence is assumed:…”

Section: Analysis Methodsmentioning

confidence: 99%

Study of point- and cluster-defects in radiation-damaged silicon

Donegani

Fretwurst

Garutti

et al. 2018

Nuclear Instruments and Methods in Physics Research Section A:

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“…The concept used to simulate DLTS measurements has been extensively discussed in Ref. 26 and a variety of alternative approaches to compute or simulate the DLTS signal have been proposed and investigated. 27,28 A summary of the simulation approach results is given in the schematic illustration of Fig.…”

Section: B Dlts Simulationsmentioning

confidence: 99%

A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices

Nyamhere¹,

Scheinemann²,

Schenk³

et al. 2015

Journal of Applied Physics

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In this work, the electrical properties of dislocation loops and their role in the generation of leakage currents in p-n or Schottky junctions were investigated both experimentally and through simulations. Deep Level Transient Spectroscopy (DLTS) reveals that the implantation of silicon with 2 × 1015 Ge cm−2 and annealing between 1000 °C and 1100 °C introduced two broad electron levels EC − 0.38 eV and EC − 0.29 eV in n-type samples and a single broad hole trap EV + 0.25 eV in the p-type samples. These trap levels are related to the extended defects (dislocation loops) formed during annealing. Dislocation loops are responsible for the significant increase of leakage currents which are attributed to the same energy levels. The comparison between structural defect parameters and electrical defect concentrations indicates that atoms located on the loop perimeter are the likely sources of the measured DLTS signals. The combined use of defect models and recently developed DLTS simulation allows reducing the number of assumptions and fitting parameters needed for the simulation of leakage currents, therefore improving their predictability. It is found that simulations based on the coupled-defect-levels model reproduce well the measured leakage current values and their field dependence behaviour, indicating that leakage currents can be successfully simulated on the exclusive basis of the experimentally observed energy levels.

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“…A first approach to inter-centre charge transfer is the coupled defect-level (CDL) recombination, available in TCAD [5] that considers transitions between two defect levels. Further modelization of ICC is beyond standard TCAD although there are efforts [6], to define new recombination models to be included in TCAD 4 . ICC is most visible in the increase of the leakage current so it can be taken into account,…”

Section: Introductionmentioning

confidence: 99%

TCAD Device Simulations of Irradiated Silicon Detectors

Pinto¹,

Moll²,

Schwandt³

et al. 2020

Proceedings of the 28th International Workshop on Vertex Detectors — PoS(Vertex2019)

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The high hadron fluences expected during the HL-LHC programme will impose strong constraints in terms of radiation damage on silicon detectors. New TCAD simulation models are needed to predict the expected detector performances. This review examines the challenges ahead for different types of detector devices, with emphasis on the acceptor removal effect in LGADs, surface damage in Monolithic and Strip sensors and bulk damage in all sensor types.

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TCAD‐based DLTS simulation for analysis of extended defects

Cited by 7 publications

References 24 publications

Study of point- and cluster-defects in radiation-damaged silicon

Study of point- and cluster-defects in radiation-damaged silicon

A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices

TCAD Device Simulations of Irradiated Silicon Detectors

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