Digital Encyclopedia of Applied Physics 2015
DOI: 10.1002/3527600434.eap744
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LTS Josephson Junctions and Circuits

Abstract: The article contains sections titled:IntroductionJunction CharacterizationNb–Al/AlOx–NbJunction TechnologyCircuits, Applications, and Resulting Requirements forJosephson Junctions

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Cited by 3 publications
(3 citation statements)
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“…In our previous experiments [10][11][12] , we applied this methodology to study the transport of Cooper pairs through an (NF)nN multilayer typically composed of n = 10 metallic NF bilayers, sometimes with an additional nm-thick insulating (I = Al/AlOx) tunnel barrier. Instead of the conventional Fraunhofer Ic(H) dependence expected for SNS and SIS junctions 13 , we have observed SQUID-like Ic oscillations as a function of the in-plane magnetic field 14 . In our previous work 10 , this finding was explained by hypothesizing the presence of edge currents in the hybrid weak link, while the question of their directionality (one-or two-way transport) remained open.…”
contrasting
confidence: 68%
“…In our previous experiments [10][11][12] , we applied this methodology to study the transport of Cooper pairs through an (NF)nN multilayer typically composed of n = 10 metallic NF bilayers, sometimes with an additional nm-thick insulating (I = Al/AlOx) tunnel barrier. Instead of the conventional Fraunhofer Ic(H) dependence expected for SNS and SIS junctions 13 , we have observed SQUID-like Ic oscillations as a function of the in-plane magnetic field 14 . In our previous work 10 , this finding was explained by hypothesizing the presence of edge currents in the hybrid weak link, while the question of their directionality (one-or two-way transport) remained open.…”
contrasting
confidence: 68%
“…The total quasiparticle current-vs-voltage characteristics of S/N-I-S heterostructures can be represented as a sum of independent contributions from individual transverse modes with a known distribution ( ) D ρ of their transmission probabilities. Averaging the I-V curves for fixed parameters Z with the distribution function (1) we get an expected dissipative current-voltage characteristic for an S/N-I-S fourlayered device with ideally disordered insulating barrier. Further, it will be characterized by the ratio of the subgap…”
Section: ( ) D ρmentioning
confidence: 98%
“…Therefore, notwithstanding some excellent results in specific areas such as voltage standard and RSFQ circuits, where superconductive Josephson junctions are providing the best solution to some of the mentioned items [1], the research is still active to achieve an "ideal" basic element for superconductive active circuits. Since for medium-to high-integration applications mentioned above one common desire is to have devices with non-hysteretic current-voltage (I-V) characteristics, intrinsic shunting of the barrier can achieve the objective, while keeping the size of the circuits as small as possible.…”
Section: Introductionmentioning
confidence: 99%