III ‐ V Compound Semiconductor Optoelectronic Devices

Abstract

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Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure

“…10 Although these processes have enabled the successful demonstration of different prototypes, a further, substantial material quality improvement is still needed in view of future high-performance, monolithically integrated devices. This is particularly true for InP, owing to its huge potential impact on a variety of electronic and photonic devices, 11,12 such as heterojunction bipolar transistors (HBTs), metal-oxide−semiconductor field-effect transistors (MOSFETs), solar cells, photodetectors, lasers, and many telecommunication devices like optical generation, switching, and detection components etc.…”